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參數(shù)資料
| 型號： | JANTXV2N918 |
| 英文描述： | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| 中文描述： | 晶體管|晶體管|叩| 15V的五（巴西）總裁| 50mA的一（c）|至72 |
| 文件頁數(shù)： | 21/21頁 |
| 文件大小： | 137K |
| 代理商： | JANTXV2N918 |
MIL-PRF-19500/368F
9
* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-PRF-19500
and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that
exceed the limits of table I herein shall not be acceptable.
Screen
(see table IV
Measurement
of MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
3c
Thermal impedance (see 4.3.3)
7
Hermetic seal (optional)
(1)
9
I
CBO1
and h
FE1
Not applicable
10
48 hours minimum
11
I
CBO1
; h
FE1
;
I
CB01 = 100 percent of initial value
or 0.5
A dc, whichever is greater;
h
FE1
=
± 15 percent of initial value.
I
CBO1
and h
FE1
12
See 4.3.2, 240 hours minimum
See 4.3.2, 80 hours minimum
13
Subgroups 2 and 3 of table I herein;
I
CB01
= 100 percent of initial value or 200 nA
dc, whichever is greater;
h
FE1
=
± 15 percent of initial value.
Subgroup 2 of table I herein;
I
CB01
= 100 percent of initial value or 200 nA dc,
whichever is greater;
h
FE1
=
± 15 percent of initial value.
14
Optional
Optional (1)
(1) Hermetic seal test shall be performed in either screen 7 or screen 14.
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500. As a minimum, die shall be 100 percent probed to ensure the assembled chips will meet the
requirements of table I, group A, subgroup 2.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be
applied to achieve TJ = +135
°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.
4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 MIL-STD-750. Read and record data (ZθJX) shall be supplied to the qualifying activity on one lot
(random sample of 500 devices minimum) prior to shipment. The following conditions shall apply.
a. IH forward heating current ----------- 250 mA.
b. tH heating time -------------------------- 10 ms.
c. IM measurement current -------------- 10 mA.
d. tMD measurement delay time ------- 30 - 60 s.
e. VCE collector-emitter voltage ------- 10 V dc minimum.
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 20 °C/W.
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| JANTXV4N22 | 功能描述:Optoisolator Transistor with Base Output 1000VDC 1 Channel TO-78-6 制造商:tt electronics/optek technology 系列:- 包裝:散裝 零件狀態(tài):有效 通道數(shù):1 電壓 - 隔離:1000VDC 電流傳輸比（最小值）:25% @ 10mA 電流傳輸比（最大值）:- 打開 / 關(guān)閉時間（典型值）:- 上升/下降時間（典型值）:20μs，20μs（最大） 輸入類型:DC 輸出類型:有基極的晶體管 電壓 - 輸出（最大值）:40V 電流 - 輸出/通道:50mA 電壓 - 正向（Vf）（典型值）:1.5V（最大） 電流 - DC 正向（If）:40mA Vce 飽和值（最大值）:300mV 工作溫度:-55°C ~ 125°C 安裝類型:通孔 封裝/外殼:TO-78-6 金屬罐 供應(yīng)商器件封裝:TO-78-6 標(biāo)準(zhǔn)包裝:1 |
| JANTXV4N22A | 功能描述:Optoisolator Transistor with Base Output 1000VDC 1 Channel TO-78-6 制造商:tt electronics/optek technology 系列:- 包裝:散裝 零件狀態(tài):有效 通道數(shù):1 電壓 - 隔離:1000VDC 電流傳輸比（最小值）:25% @ 10mA 電流傳輸比（最大值）:- 打開 / 關(guān)閉時間（典型值）:- 上升/下降時間（典型值）:20μs，20μs（最大） 輸入類型:DC 輸出類型:有基極的晶體管 電壓 - 輸出（最大值）:40V 電流 - 輸出/通道:50mA 電壓 - 正向（Vf）（典型值）:1.5V（最大） 電流 - DC 正向（If）:40mA Vce 飽和值（最大值）:300mV 工作溫度:-55°C ~ 125°C 安裝類型:通孔 封裝/外殼:TO-78-6 金屬罐 供應(yīng)商器件封裝:TO-78-6 標(biāo)準(zhǔn)包裝:1 |
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