參數(shù)資料
型號(hào): K4C89093AF-GCF5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk
中文描述: 288Mb x18網(wǎng)絡(luò)DRAM2規(guī)范
文件頁(yè)數(shù): 19/55頁(yè)
文件大?。?/td> 1470K
代理商: K4C89093AF-GCF5
K4C89183AF
- 19 -
REV. 0.7 Jan. 2005
Command
CLK
CLK
Input
(Control &
Addresses)
t
IS
t
IH
t
REFI
, t
PAUSE
, Ixxxx Timing
t
IS
t
IH
Command
t
REFI,
t
PAUSE,
I
XXXX
Note. "
I
XXXX
"means "
I
RC
", "
I
RCD
", "
I
RAS
", etc.
~
~
相關(guān)PDF資料
PDF描述
K4C89093AF-GCF6 288Mb x18 Network-DRAM2 Specification
K4C89093AF-GCFB Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 150uF; Voltage: 250V; Case Size: 18x31.5 mm; Packaging: Bulk
K4C89093AF-GIFB Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes
K4C89163AF-GCF5 288Mb x18 Network-DRAM2 Specification
K4C89163AF-GCF6 288Mb x18 Network-DRAM2 Specification
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