| 型號(hào) | 廠商 | 描述 |
| k37160x1eb1s 2 3 |
MICROSEMI CORP-LAWRENCE | Silicon Power Rectifier Assemblies Plate Heatsink |
| k37160x1en1s 2 3 |
MICROSEMI CORP-COLORADO | Silicon Power Rectifier Assemblies Plate Heatsink |
| k37160y1eb1s 2 3 |
MICROSEMI CORP-COLORADO | Silicon Power Rectifier Assemblies Plate Heatsink |
| k37160y1en1s 2 3 |
MICROSEMI CORP-LAWRENCE | Silicon Power Rectifier Assemblies Plate Heatsink |
| k37160z1eb1s 2 3 |
MICROSEMI CORP-COLORADO | Silicon Power Rectifier Assemblies Plate Heatsink |
| k3nr-nb1c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Electronic Theatre Controls, Inc. | High-speed, Intelligent Interface Modules |
| k3nr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Electronic Theatre Controls, Inc. | High-speed, Intelligent Interface Modules |
| k3nr-nb1a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Electronic Theatre Controls, Inc. | High-speed, Intelligent Interface Modules |
| k3nr-nb2a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Electronic Theatre Controls, Inc. | High-speed, Intelligent Interface Modules |
| k3nr-nb2c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Electronic Theatre Controls, Inc. | High-speed, Intelligent Interface Modules |
| k3nr-pb1a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Electronic Theatre Controls, Inc. | High-speed, Intelligent Interface Modules |
| k3nr-pb1c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Electronic Theatre Controls, Inc. | High-speed, Intelligent Interface Modules |
| k3nr-pb2a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Electronic Theatre Controls, Inc. | High-speed, Intelligent Interface Modules |
| k3nr-pb2c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Electronic Theatre Controls, Inc. | High-speed, Intelligent Interface Modules |
| k3p6c2000b-sc 2 3 4 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M-Bit (2Mx16 /1Mx32) CMOS MASK ROM |
| k3p7v1000 2 3 4 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM |
| k3p7v1000b-yc 2 3 4 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM |
| k3p7vu1000b-yc 2 3 4 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM |
| k470 |
surface mount silicon Zener diodes | |
| k430 |
surface mount silicon Zener diodes | |
| k4c89083af-aif6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89183af-gcfb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89183af-gif5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89183af-gif6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89183af-gifb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89093af-aif6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89163af-aif6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89183af-aif6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | JT 55C 55#22M PIN PLUG |
| k4c89083af-aifb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | JT 55C 55#22 SKT PLUG |
| k4c89093af-aifb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89163af-aifb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | JT 8C 8#16 PIN PLUG |
| k4c89183af-aifb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89083af-gifb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89093af-gcf5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk |
| k4c89093af-gcf6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89093af-gcfb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 150uF; Voltage: 250V; Case Size: 18x31.5 mm; Packaging: Bulk |
| k4c89093af-gifb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes |
| k4c89163af-gcf5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89163af-gcf6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89163af-gcfb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89163af-gif5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89163af-gif6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89163af-gifb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89183af 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89183af-gcf5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89183af-gcf6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89093af-gif5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk |
| k4c89093af-gif6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89083af-acf5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |
| k4c89083af-acf6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mb x18 Network-DRAM2 Specification |