參數(shù)資料
型號(hào)： K4C89093AF-GIFB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes
中文描述： 288Mb x18網(wǎng)絡(luò)DRAM2規(guī)范
文件頁(yè)數(shù)： 52/55頁(yè)
文件大小： 1470K
代理商： K4C89093AF-GIFB
K4C89183AF
- 52 -
REV. 0.7 Jan. 2005
RDA
LAL
Data 0 Data 1 Data 2 Data 3
Addressing sequence for Sequential mode
Data
Data 0
Data 1
Data 2
Data 3
Access Address
n
n + 1
n + 2
n + 3
Burst Length
4 words(Address bits is LA1, LA0)
not carried from LA1~LA2
CAS Latency = 4 (Free Running QS mode)
CK
CK
Command
QS
DQ
Functional Description (Continued)
Addressing sequence of Inteleave mode
A column access is started from the inputted lower address and is performed by interleaving the address bits in the
sequence shown as the following.
Addressing sequence for Interleave mode
(R-3) CAS Latency field (A6 to A4)
This field specifies the number of clock cycles from the assertion of the LAL command following the RDA command to
the first data read. The minimum values of CAS Latency depends on the frequency of CLK. In a write mode, the place of
clock which should input write data is CAS Latency cycles - 1.
Data
Data 0
Data 1
Data 2
Data 3
Access Address
...A8 A7 A6 A5 A4 A3 A2 A1 A0
...A8 A7 A6 A5 A4 A3 A2 A1 A0
...A8 A7 A6 A5 A4 A3 A2 A1 A0
...A8 A7 A6 A5 A4 A3 A2 A1 A0
Burst Length
4 words
Addressing sequence for Interleave mode
A6
0
A5
0
A4
0
CAS
Latency
Reserved
0
0
0
1
1
0
Reserved
Reserved
0
1
1
Reserved
1
1
0
0
0
1
4
5
1
1
0
6
1
1
1
7
相關(guān)PDF資料
PDF描述
K4C89163AF-GCF5 288Mb x18 Network-DRAM2 Specification
K4C89163AF-GCF6 288Mb x18 Network-DRAM2 Specification
K4C89163AF-GCFB 288Mb x18 Network-DRAM2 Specification
K4C89163AF-GIF5 288Mb x18 Network-DRAM2 Specification
K4C89163AF-GIF6 288Mb x18 Network-DRAM2 Specification
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4C89163AF-ACF5 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89163AF-ACF6 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89163AF-ACFB 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89163AF-AIF5 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89163AF-AIF6 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
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