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參數(shù)資料
| 型號(hào)： | K4C89163AF-AIFB |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | JT 8C 8#16 PIN PLUG |
| 中文描述： | 288Mb x18網(wǎng)絡(luò)DRAM2規(guī)范 |
| 文件頁(yè)數(shù)： | 2/55頁(yè) |
| 文件大?。?/td> | 1470K |
| 代理商： | K4C89163AF-AIFB |
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K4C89183AF
Revision History
Version 0.0 (Oct. 2002)
- First Release
- 2 -
REV. 0.7 Jan. 2005
Version 0.01 (Nov. 2002)
- Changed die revision from D-die to F-die
- Corrected typo
- Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.
Version 0.1 (Apr. 2003)
- Added 800Mbps(400Mhz) product
- Changed operating temperature from Ta to Tc.
- Changed capacitance of ADDR/CMD/CLK
- Changed tDSS(DS input Falling Edge to Clock Setup Time)
- Added CL7 for 800Mbps
- Deleted TSOP package outline
Version 0.11 (Apr. 2003)
- Corrected typo in page 3.(Deleted bi-directional strobe)
-
Corrected min. Vref to VDDQ/2x95% in page 7
Version 0.2 (Aug. 2003)
- Added package physical dimension
- Extracted 800Mbps(G7) binning from target spec ( G7 will be added in the future)
- Changed DC test condition
- Changed low frequency spec like below
- Changed AC test load picture
Version 0.3 (Nov. 2003)
-
Changed Packge type from die-exposed to full molded
- Changed Package code in Partnumber
From
To
Min
Max
Min
Max
Addr/CMD/CLK
1.5
2.5
1.5
3.0
From
To
F6
FB
F5
G7
F6
FB
F5
CL4
0.9
0.9
1.0
0.75
0.75
0.8
1.0
CL5
0.9
0.9
1.0
0.75
0.75
0.8
1.0
CL6
0.9
0.9
1.0
0.75
0.75
0.8
1.0
CL7
-
-
-
0.75
-
-
-
From
To
Changed point
Changed condition
newly inserted
IDD1S,IDD2N,IDD2P,IDD5,IDD6
-
IDD1S,IDD2N,IDD2P,IDD5B,IDD6
IDD4W, IDD4R
From
FB
7.5
7.5
7.5
To
FB
6.0
6.0
6.0
Unit : ns
tCK max@CL=4
tCK max@CL=5
tCK max@CL=6
F6
7.5
7.5
7.5
F5
7.5
7.5
7.5
F6
6.0
6.0
6.0
F5
6.0
6.0
6.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4C89183AF-AIFB | 288Mb x18 Network-DRAM2 Specification |
| K4C89083AF-GIFB | 288Mb x18 Network-DRAM2 Specification |
| K4C89093AF-GCF5 | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk |
| K4C89093AF-GCF6 | 288Mb x18 Network-DRAM2 Specification |
| K4C89093AF-GCFB | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 150uF; Voltage: 250V; Case Size: 18x31.5 mm; Packaging: Bulk |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89163AF-GCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89163AF-GCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89163AF-GCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89163AF-GIF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89163AF-GIF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
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