參數(shù)資料
型號: K4C89163AF-GIFB
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 288Mb x18 Network-DRAM2 Specification
中文描述: 288Mb x18網(wǎng)絡DRAM2規(guī)范
文件頁數(shù): 17/55頁
文件大?。?/td> 1470K
代理商: K4C89163AF-GIFB
K4C89183AF
- 17 -
REV. 0.7 Jan. 2005
Q0
LAL
(after RDA)
t
IS
t
IH
t
CH
t
CL
t
CK
t
CKQS
t
CKQS
t
QSP
t
QSP
t
CKQS
t
QSQ
t
LZ
t
QSQV
t
AC
t
QSQV
t
QSQ
t
HZ
t
QSQ
High-Z
CK
CK
Input
(Control &
Addresses)
CAS latency = 4
LQS/UQS
(Output)
DQ
(Output)
Read Timing (Burst Length = 4)
Unidirectional DS/Free Running QS mode
DESL
LDS/UDS
(Input)
Q1
Q2
Q3
t
AC
t
AC
t
OH
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Q0
t
CKQS
t
CKQS
t
QSP
t
QSP
t
CKQS
t
QSQ
t
LZ
t
QSQV
t
AC
t
QSQV
t
QSQ
t
HZ
t
QSQ
High-Z
CAS latency = 5
LQS/UQS
(Output)
DQ
(Output)
Q1
Q2
Q3
t
AC
t
AC
t
OH
Note : DQ0 to DQ17 are aligned with LQS.
DQ18 to DQ35 are aligned with UQS.
LQS/UQS is always asserted in Free Running QS mode.
Q0
t
CKQS
t
CKQS
t
QSP
t
QSP
t
CKQS
t
QSQ
t
LZ
t
QSQV
t
AC
t
QSQV
t
QSQ
t
HZ
t
QSQ
High-Z
CAS latency = 6
LQS/UQS
(Output)
DQ
(Output)
Q1
Q2
Q3
t
AC
t
AC
t
OH
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