- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373059 > K4C89183AF-GIF6 (SAMSUNG SEMICONDUCTOR CO. LTD.) 288Mb x18 Network-DRAM2 Specification PDF資料下載
參數(shù)資料
| 型號： | K4C89183AF-GIF6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 288Mb x18 Network-DRAM2 Specification |
| 中文描述： | 288Mb x18網(wǎng)絡DRAM2規(guī)范 |
| 文件頁數(shù)： | 12/55頁 |
| 文件大小： | 1470K |
| 代理商： | K4C89183AF-GIF6 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
K4C89183AF
- 12 -
REV. 0.7 Jan. 2005
AC Characteristics and Operating Conditions
(Notes : 1, 2) (Continued)
Symbol
Parameter
F6
FB
F5
Units Notes
Min
Max
Min
Max
Min
Max
t
LZ
Data-out Low Impedance Time from CLK
-0.5
-
-0.5
-
-0.6
-
3, 6, 8
t
HZ
Data-out High Impedance Time from CLK
-
0.5
-
0.5
-
0.6
3, 7, 8
t
QPDH
Last Output to PD High Hold Time
0
-
0
-
0
-
t
PDEX
Power Down Exit Time
0.6
-
0.6
-
0.7
-
3
t
T
Input Transition Time
0.1
1
0.1
1
0.1
1
t
FPDL
PD Low Input Window for Self-Refresh Entry
-0.5*t
CK
5
-0.5*t
CK
5
-0.5*t
CK
5
3
t
REFI
Auto-Refresh Average Interval
0.4
3.9
0.4
3.9
0.4
3.9
us
5
t
PAUSE
Pause Time after Power-up
200
-
200
-
200
-
I
RC
Random Read/Write Cycle Time
(Applicable to Same Bank)
C
L
= 4
5
-
5
-
5
-
Cycle
C
L
= 5
6
-
6
-
6
-
C
L
= 6
7
-
7
-
7
-
C
L
= 7
-
-
-
-
-
-
I
RCD
RDA/WRA to LAL Command Input Delay
(Applicable to Same Bank)
1
1
1
1
1
1
I
RAS
LAL to RDA/WRA Command Input Delay
(Applicable to Same Bank)
C
L
= 4
4
-
4
-
4
-
C
L
= 5
5
-
5
-
5
-
C
L
= 6
6
-
6
-
6
-
C
L
= 7
-
-
-
-
-
-
I
RBD
Random Bank Access Delay
(Applicable to Other Bank)
2
-
2
-
2
-
I
RWD
LAL following RDA to WRA Delay
(Applicable to Other Bank)
BL = 4
3
-
3
-
3
-
I
WRD
LAL following WRA to RDA Delay
(Applicable to Other Bank)
1
-
1
-
1
-
I
RSC
Mode Register Set Cycle Time
C
L
= 4
7
-
7
-
7
-
C
L
= 5
7
-
7
-
7
-
C
L
= 6
7
-
7
-
7
-
C
L
= 7
I
PD
PD Low to Inactive State of Input Buffer
-
2
-
2
-
2
I
PDA
PD High to Active State of Input Buffer
1
-
1
-
1
-
I
PDV
Power down mode valid from REF com-
mand
C
L
= 4
19
-
19
-
19
-
C
L
= 5
23
-
23
-
23
-
C
L
= 6
25
-
25
-
25
-
C
L
= 7
I
REFC
Auto-Refresh Cycle Time
C
L
= 4
19
-
19
-
19
-
C
L
= 5
23
-
23
-
23
-
C
L
= 6
25
-
25
-
25
-
C
L
= 7
I
LOCK
DLL Lock-on Time (Applicable to RDA command)
200
-
200
-
200
-
相關PDF資料 |
PDF描述 |
|---|---|
| K4C89183AF-GIFB | 288Mb x18 Network-DRAM2 Specification |
| K4C89093AF-AIF6 | 288Mb x18 Network-DRAM2 Specification |
| K4C89163AF-AIF6 | 288Mb x18 Network-DRAM2 Specification |
| K4C89183AF-AIF6 | JT 55C 55#22M PIN PLUG |
| K4C89083AF-AIFB | JT 55C 55#22 SKT PLUG |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4C89183AF-GIFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification |
| K4C89323AF-GCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-GCF6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-GCFB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
| K4C89323AF-TCF5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。