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參數(shù)資料
| 型號(hào)： | K4D261638F-TC50 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit GDDR SDRAM |
| 中文描述： | 128Mbit GDDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 15/18頁 |
| 文件大小： | 225K |
| 代理商： | K4D261638F-TC50 |
128M GDDR SDRAM
K4D261638F
- 15 -
Rev. 1.2 (Jan. 2004)
AC CHARACTERISTICS (II - 1)
K4D261638F-TC25
Frequency
400MHz (2.5ns)
350MHz ( 2.86ns )
300MHz ( 3.3ns )
275MHz ( 3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
Cas Latency
5
4
4
4
3
3
tRC
18
16
16
16
13
12
tRFC
19
17
17
17
15
14
tRAS
13
11
11
11
9
8
tRCDRD
6
5
5
4
4
4
tRCDWR
4
3
3
2
2
2
tRP
5
5
5
5
4
4
tRRD
4
3
3
3
3
3
tDAL
9
9
9
9
7
7
Unit
tCK
tCK
tCK
tCK
tCK
tCK
(Unit : Number of Clock)
AC CHARACTERISTICS (I - 1)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
Parameter
Symbol
-25
-2A
-33
Unit
Note
Min
18
19
13
6
4
5
4
Max
-
-
100K
-
-
-
-
Min
16
17
11
5
3
5
3
Max
-
-
100K
-
-
-
-
Min
16
17
11
5
3
5
3
Max
-
-
100K
-
-
-
-
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge @Normal Pre-
charge
Last data in to Row precharge @Auto Pre-
charge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery + Precharge
Exit self refresh to read command
tRC
tRFC
tRAS
tRCDRD
tRCDWR
tRP
tRRD
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tWR
4
-
4
-
4
-
tCK
1
tWR_A
4
-
4
-
4
-
tCK
1
tCDLR
tCCD
tMRD
tDAL
tXSR
3
1
2
9
-
-
-
-
3
1
2
9
-
-
-
-
-
3
1
2
9
-
-
-
-
-
tCK
tCK
tCK
tCK
tCK
1
200
3tCK
+tIS
7.8
200
3tCK
+tIS
7.8
200
3tCK
+tIS
7.8
Power down exit time
tPDEX
-
-
ns
Refresh interval time
tREF
-
-
us
K4D261638F-TC33
Frequency
300MHz ( 3.3ns )
275MHz ( 3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
Cas Latency
4
4
3
3
tRC
16
16
13
12
tRFC
17
17
15
14
tRAS
11
11
9
8
tRCDRD
5
4
4
4
tRCDWR
3
2
2
2
tRP
5
5
4
4
tRRD
3
3
3
3
tDAL
9
9
7
7
Unit
tCK
tCK
tCK
tCK
K4D261638F-TC2A
Frequency
350MHz ( 2.86ns )
300MHz ( 3.3ns )
275MHz ( 3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
Cas Latency
4
4
4
3
3
tRC
16
16
16
13
12
tRFC
17
17
17
15
14
tRAS
11
11
11
9
8
tRCDRD
5
5
4
4
4
tRCDWR
3
3
2
2
2
tRP
5
5
5
4
4
tRRD
3
3
3
3
3
tDAL
9
9
9
7
7
Unit
tCK
tCK
tCK
tCK
tCK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D263238A | 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238A-GC33 | DIODE ZENER SINGLE 500mW 2.7Vz 0.05mA-Izt 0.05 1uA-Ir 1 SOD-123 3K/REEL |
| K4D263238A-GC36 | DIODE ZENER SINGLE 500mW 3Vz 0.05mA-Izt 0.05 0.8uA-Ir 1 SOD-123 3K/REEL |
| K4D263238A-GC40 | DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL |
| K4D263238A-GC45 | DIODE ZENER SINGLE 500mW 3.6Vz 0.05mA-Izt 0.05 7.5uA-Ir 2 SOD-123 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D261638I-LC50000 | 制造商:Samsung Semiconductor 功能描述:DDR SGRAM X16 TSOP2 - Trays |
| K4D261638I-LC50T00 | 制造商:Samsung Semiconductor 功能描述:DDR SGRAM X16 TSOP2 - Tape and Reel |
| K4D261638K-LC50T00 | 制造商:Samsung Semiconductor 功能描述:128MSGDDRDDR SGRAMX16TSOP2 - Tape and Reel |
| K4D263238A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238A-GC33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
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