參數(shù)資料
型號(hào): K4D263238F
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
中文描述: 100萬(wàn)x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL
文件頁(yè)數(shù): 14/17頁(yè)
文件大?。?/td> 237K
代理商: K4D263238F
128M DDR SDRAM
K4D263238F
- 14 -
Rev 1.1 (May 2003)
Note 1 :
- The JEDEC DDR specification currently defines the output data valid window(tDV) as the time period when the data
strobe and all data associated with that data strobe are coincidentally valid.
- The previously used definition of tDV(=0.35tCK) artificially penalizes system timing budgets by assuming the worst case
output valid window even then the clock duty cycle applied to the device is better than 45/55%
- A new AC timing term, tQH which stands for data output hold time from DQS is defined to account for clock duty cycle
variation and replaces tDV
- tQHmin = tHP-X where
. tHP=Minimum half clock period for any given cycle and is defined by clock high or clock low time(tCH,tCL)
. X=A frequency dependent timing allowance account for tDQSQmax
tQH Timing (CL3, BL2)
1
3
4
tHP
CK, CK
DQS
DQ
CS
2
5
0
COMMAND
READA
tQH
Da0
tDQSQ(max)
tDQSQ(max)
Da1
相關(guān)PDF資料
PDF描述
K4D263238F-QC50 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238F-QC40 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D28163HD-TC36 128Mbit DDR SDRAM
K4D28163HD-TC40 128Mbit DDR SDRAM
K4D28163HD-TC50 128Mbit DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D263238F-QC40 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238F-QC50 制造商:Samsung Electro-Mechanics 功能描述:4M X 32 DDR DRAM, 0.7 ns, PQFP100
K4D263238F-QC50000 制造商:Samsung 功能描述:DDR SGRAM X32 TQFP - Trays
K4D263238G-GC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR SDRAM
K4D263238G-GC2A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR SDRAM