參數(shù)資料
型號： K4D551638D
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Mbit GDDR SDRAM
中文描述： 片256Mbit GDDR SDRAM內(nèi)存
文件頁數(shù)： 10/18頁
文件大?。?/td> 230K
代理商： K4D551638D
256M GDDR SDRAM
K4D551638D-TC
- 10 -
Rev 1.8 (Oct. 2003)
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
POWER & DC OPERATING CONDITIONS(SSTL_2 In/Out)
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
=0 to 65
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Device Supply voltage
V
DD
2.5
2.6
2.7
V
1,
7,8
Output Supply voltage
V
DDQ
2.5
2.6
2.7
V
1,
7,8
Reference voltage
V
REF
0.49*V
DDQ
-
0.51*V
DDQ
V
2
Termination voltage
Vtt
V
REF
-0.04
V
REF
V
REF
+0.04
V
3
Input logic high voltage
V
IH(DC)
V
REF
+0.15
-
V
DDQ
+0.30
V
4
Input logic low voltage
V
IL(DC)
-0.30
-
V
REF
-0.15
V
5
Output logic high voltage
V
OH
Vtt+0.76
-
-
V
I
OH
=-15.2mA
Output logic low voltage
V
OL
-
-
Vtt-0.76
V
I
OL
=+15.2mA
Input leakage current
I
IL
-5
-
5
uA
6
Output leakage current
I
OL
-5
-
5
uA
6
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
supply relative to Vss
V
DD
-1.0 ~ 3.6
V
Voltage on V
DD
supply relative to Vss
V
DDQ
-0.5 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
2.0
W
Short circuit current
I
OS
50
mA
1. Under all conditions V
DDQ
must be less than or equal to V
DD
.
2. V
REF
is expected to equal 0.50*V
DDQ
of the transmitting device and to track variations in the DC level of the same. Peak to
peak noise on the V
REF
may not exceed +
2% of the DC value. Thus, from 0.50*V
DDQ
, V
REF
is allowed +
25mV for DC error
and an additional +
25mV for AC noise.
3. V
tt
of the transmitting device must track V
REF
of the receiving device.
4. V
IH
(max.)= V
DDQ
+1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
5. V
IL
(mim.)= -1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
6. For any pin under test input of 0V < V
IN
< V
DD
is acceptable. For all other pins that are not under test V
IN
=0V.
7. For the K4D551638D-TC2A, VDD & VDDQ = 2.8V+0.1V.
8. For the K4D551638D-TC60, VDD & VDDQ = 2.5V+5%.
Note :
相關(guān)PDF資料
PDF描述
K4D551638D-TC 256Mbit GDDR SDRAM
K4D551638D-TC2A 256Mbit GDDR SDRAM
K4D551638D-TC33 256Mbit GDDR SDRAM
K4D551638D-TC36 256Mbit GDDR SDRAM
K4D551638D-TC40 256Mbit GDDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D551638D-TC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM
K4D551638D-TC2A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM
K4D551638D-TC33 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM
K4D551638D-TC36 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM
K4D551638D-TC40 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM
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