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參數(shù)資料
| 型號(hào)： | K4D64163HF |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| 中文描述： | 100萬(wàn)× 16 × 4，銀行雙數(shù)據(jù)速率同步DRAM |
| 文件頁(yè)數(shù)： | 3/16頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | K4D64163HF |
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64M DDR SDRAM
K4D64163HF
- 3 -
Rev. 1.1(Aug. 2002)
The K4D64163H is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 16
bits, fabricated with SAMSUNG
’
s high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 1.2GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of
high performance memory system applications.
3.3V + 5% power supply for device operation
2.5V + 5% power supply for I/O interface
SSTL_2 compatible inputs/outputs
4 banks operation
MRS cycle with address key programs
-. Read latency 3 (clock)
-. Burst length (2, 4 and 8)
-. Burst type (sequential & interleave)
All inputs except data & DM are sampled at the positive
going edge of the system clock
Differential clock input
No Wrtie-Interrupted by Read Function
GENERAL DESCRIPTION
FEATURES
2 DQS’s ( 1DQS / Byte )
Data I/O transactions on both edges of Data strobe
DLL aligns DQ and DQS transitions with Clock transition
Edge aligned data & data strobe output
Center aligned data & data strobe input
DM for write masking only
Auto & Self refresh
64ms refresh period (4K cycle)
66pin TSOP-II
Maximum clock frequency up to 300MHz
Maximum data rate up to 600Mbps/pin
FOR 1M x 16Bit x 4 Bank DDR SDRAM
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
with Bi-directional Data Strobe and DLL
ORDERING INFORMATION
Part NO.
Max Freq.
Max Data Rate
Interface
Package
K4D64163HF-TC33
300MHz
600Mbps/pin
SSTL_2
66 pin TSOP-II
K4D64163HF-TC36
275MHz
550Mbps/pin
K4D64163HF-TC40
250MHz
500Mbps/pin
K4D64163HF-TC50
200MHz
400Mbps/pin
K4D64163HF-TC60
166MHz
333Mbps/pin
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D64163HF-TC33 | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC36 | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC40 | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC50 | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC60 | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D64163HF-TC33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC36 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
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