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參數(shù)資料
| 型號(hào)： | K4H510438A-TLB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Enclosures; For Use With:MNX Series Polycarbonate Enclosures; Approval Bodies:UL, CSA; External Height:5.8"; External Width:3.9"; Panel Height:5.8"; Panel Width:5.8"; Size/Dimensions:5.8 x 5.8; Enclosure Color:Silver |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數(shù)： | 22/24頁 |
| 文件大?。?/td> | 367K |
| 代理商： | K4H510438A-TLB0 |
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
Table 8. Full Strength Driver Characteristics
Pulldown Current (mA)
pullup Current (mA)
Voltage
(V)
Typical
Low
Typical
High
Minimum
Maximum
Typical
Low
Typical
High
Minimum
Maximum
0.1
6.0
6.8
4.6
9.6
-6.1
-7.6
-4.6
-10.0
0.2
12.2
13.5
9.2
18.2
-12.2
-14.5
-9.2
-20.0
0.3
18.1
20.1
13.8
26.0
-18.1
-21.2
-13.8
-29.8
0.4
24.1
26.6
18.4
33.9
-24.0
-27.7
-18.4
-38.8
0.5
29.8
33.0
23.0
41.8
-29.8
-34.1
-23.0
-46.8
0.6
34.6
39.1
27.7
49.4
-34.3
-40.5
-27.7
-54.4
0.7
39.4
44.2
32.2
56.8
-38.1
-46.9
-32.2
-61.8
0.8
43.7
49.8
36.8
63.2
-41.1
-53.1
-36.0
-69.5
0.9
47.5
55.2
39.6
69.9
-41.8
-59.4
-38.2
-77.3
1.0
51.3
60.3
42.6
76.3
-46.0
-65.5
-38.7
-85.2
1.1
54.1
65.2
44.8
82.5
-47.8
-71.6
-39.0
-93.0
1.2
56.2
69.9
46.2
88.3
-49.2
-77.6
-39.2
-100.6
1.3
57.9
74.2
47.1
93.8
-50.0
-83.6
-39.4
-108.1
1.4
59.3
78.4
47.4
99.1
-50.5
-89.7
-39.6
-115.5
1.5
60.1
82.3
47.7
103.8
-50.7
-95.5
-39.9
-123.0
1.6
60.5
85.9
48.0
108.4
-51.0
-101.3
-40.1
-130.4
1.7
61.0
89.1
48.4
112.1
-51.1
-107.1
-40.2
-136.7
1.8
61.5
92.2
48.9
115.9
-51.3
-112.4
-40.3
-144.2
1.9
62.0
95.3
49.1
119.6
-51.5
-118.7
-40.4
-150.5
2.0
62.5
97.2
49.4
123.3
-51.6
-124.0
-40.5
-156.9
2.1
62.9
99.1
49.6
126.5
-51.8
-129.3
-40.6
-163.2
2.2
63.3
100.9
49.8
129.5
-52.0
-134.6
-40.7
-169.6
2.3
63.8
101.9
49.9
132.4
-52.2
-139.9
-40.8
-176.0
2.4
64.1
102.8
50.0
135.0
-52.3
-145.2
-40.9
-181.3
2.5
64.6
103.8
50.2
137.3
-52.5
-150.5
-41.0
-187.6
2.6
64.8
104.6
50.4
139.2
-52.7
-155.3
-41.1
-192.9
2.7
65.0
105.4
50.5
140.8
-52.8
-160.1
-41.2
-198.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510438B-TCA0 | Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 |
| K4H510438B-TCA2 | Enclosure; For Use With:PC21/28-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:7.9"; External Width:5.6"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 |
| K4H510438B-TCB0 | Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes |
| K4H510438B-TLA0 | Enclosures; For Use With:PC36/31-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; Features:Impact Resistant EN 50102; UV Resistant to UL 508; Approval Categories:Flammability Rated UL94-5V; Protection Rated IP65 |
| K4H510438B-TLA2 | 128Mb DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510438B-GC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die DDR SDRAM Specification |
| K4H510438B-GC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die DDR SDRAM Specification |
| K4H510438B-GC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die DDR SDRAM Specification |
| K4H510438B-GC/LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die DDR SDRAM Specification |
| K4H510438B-TC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die DDR SDRAM Specification |
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