參數(shù)資料
型號(hào): K4H560838D-GCB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DIODE ZENER SINGLE 150mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-523 3K/REEL
中文描述: 的DDR 256Mb的
文件頁(yè)數(shù): 19/19頁(yè)
文件大?。?/td> 171K
代理商: K4H560838D-GCB0
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
j. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
k. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotony.
相關(guān)PDF資料
PDF描述
K4H560838D-GCB3 DIODE ZENER SINGLE 200mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-323 3K/REEL
K4H560838D-GLA2 DIODE ZENER SINGLE 500mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-123 3K/REEL
K4H560838D-GLB0 DIODE ZENER SINGLE 500mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-123 3K/REEL
K4H560838D-GLB3 DIODE ZENER SINGLE 500mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-123 3K/REEL
K4H560838E-GCA2 DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H560838D-GCB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb
K4H560838D-GLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb
K4H560838D-GLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb
K4H560838D-GLB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb
K4H560838D-NC/LA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII