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參數(shù)資料
| 型號： | K4H560838D-TLA0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb DDR SDRAM |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數(shù)： | 13/19頁 |
| 文件大小： | 171K |
| 代理商： | K4H560838D-TLA0 |
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
AC Operating Conditions
Parameter/Condition
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
Min
Max-10
Unit
V
V
V
V
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
VREF + 0.31
VREF - 0.31
VDDQ+0.6
0.5*VDDQ+0.2
0.7
1
2
0.5*VDDQ-0.2
AC
Overshoot/Undershoot specification for Address and Control Pins
Parameter
Specification
DDR400
1.5V
1.5V
4.5V-ns
4.5V-ns
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5
0.6875
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.3125
6.5
7.0
VDD
Overshoot
Maximum Amplitude = 1.5V
Area = 4.5V-ns
Maximum Amplitude = 1.5V
undershoot
GND
V
Tims(ns)
AC overshoot/Undershoot Definition
Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838D-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H560838D-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H560838E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM 256Mb E-die (x4, x8) |
| K4H560838E-GC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) |
| K4H560838E-GC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) |
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