| 型號(hào) | 廠商 | 描述 |
| k4h560838e-zla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Rectangular Industrial Connector Housing; Series:C-146; No. of Contacts:10; Gender:Female; Body Material:Aluminum Alloy; Connecting Termination:Screw; For Use With:C146 Rectangular Circular Connectors; Operating Voltage:400V RoHS Compliant: Yes |
| k4h560838e-zcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | CAP, 10NF 1KV 10%, SMT, 1812 |
| k4h560838e-zcb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| k4h560838e-glb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL |
| k4h560838e-glb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL |
| k4h560838m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838e-ula2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h560838e-ulaa 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h560838e-vlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| k4h560838e-vlb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| k4h560838f-uc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb F-die DDR400 SDRAM Specification |
| k4h560838a-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Quad Micropower Precision Low-Voltage Operational Amplifier 14-SOIC |
| k4h560838a-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838a-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838a-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838a-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Quad Micropower Precision Low-Voltage Operational Amplifier 14-PDIP |
| k4h560838b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838b-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838b-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Quad, Micropower, LinCMOS(TM) Comparator 20-LCCC -55 to 125 |
| k4h560838b-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Quad, Micropower, LinCMOS(TM) Comparator 14-CDIP -55 to 125 |
| k4h560838b-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838b-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Quad, Micropower, LinCMOS(TM) Comparator 14-SOIC |
| k4h560838b-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Quad, Micropower, LinCMOS(TM) Comparator 20-LCCC -55 to 125 |
| k4h560838c-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Quad, Micropower, LinCMOS(TM) Comparator 14-CDIP -55 to 125 |
| k4h560838c-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Quad, Micropower, LinCMOS(TM) Comparator 14-CDIP -55 to 125 |
| k4h560838c-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 4 Ch. 16-SOIC -40 to 85 |
| k4h560838c-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838c-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 4 Ch. 16-TSSOP -40 to 85 |
| k4h560838c-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838e-ncb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) |
| k4h560838e-ncb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) |
| k4h560838e-uca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h560838e-ucaa 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h560838e-ucb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h560838e-ucb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h560838e-vca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| k4h560838e-vcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| k4h560838e-vcb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| k4h560838e-vla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| k4h560838f-ucc4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb F-die DDR400 SDRAM Specification |
| k4h560838f-uccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb F-die DDR400 SDRAM Specification |
| k4h560838d-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838d-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838d-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC |
| k4h560838d-tcc4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb D-die DDR400 SDRAM Specification |
| k4h560838d-tccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb D-die DDR400 SDRAM Specification |
| k4h560838d-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838d-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC |
| k4h560838d-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h560838e-nla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) |