參數(shù)資料
型號: K4H560838E-ULB3
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
中文描述: 256Mb的電子芯片與DDR SDRAM的規(guī)格鉛66 TSOP-II免費(fèi)(符合RoHS)
文件頁數(shù): 11/19頁
文件大?。?/td> 171K
代理商: K4H560838E-ULB3
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
DDR SDRAM I
DD
spec table
(V
DD
=2.7V, T = 10
°
C)
Symbol
32Mx8
Unit
Notes
- CC(DDR400@CL=3)
105
130
4
30
25
55
75
185
220
200
3
1.5
350
- C4(DDR400@CL=3)
100
130
4
30
25
55
75
185
220
200
3
1.5
350
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD6
Normal
Low power
IDD7A
Optional
Symbol
16Mx16
Unit
Notes
- CC(DDR400@CL=3)
110
150
4
30
25
55
75
220
250
200
3
1.5
380
- C4(DDR400@CL=3)
105
145
4
30
25
55
75
220
250
200
3
1.5
380
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD6
Normal
Low power
IDD7A
Optional
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