參數(shù)資料
型號(hào): K4H560838E-VLB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
中文描述: 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格54 sTSOP與鉛二無(wú)(符合RoHS)
文件頁(yè)數(shù): 5/19頁(yè)
文件大?。?/td> 171K
代理商: K4H560838E-VLB0
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
Units : Millimeters
0.30
±
0.08
0.65TYP
0.65
±
0.08
(0.71)
22.22
±
0.10
0.125
(
1
±
0
0
×
~8
×
#1
#33
#66
#34
(1.50)
(
1
±
0
1
(
(
(
1
±
0
(10
×
)
(10
×
)
-0.035
(
0.10 MAX
0.075 MAX
[
]
0
(10
×
)
(10
×
)
(R015)
0
±
0
0
±
0
(R015
(
×
)
(02)
(R025
0
0.25TYP
NOTE
1. ( ) IS REFERENCE
2. [ ] IS ASS
Y OUT QUALITY
66pin TSOPII / Package dimension
Package Physical Demension
相關(guān)PDF資料
PDF描述
K4H560838E-VLB3 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
K4H560838F-UC 256Mb F-die DDR400 SDRAM Specification
K4H560838A-TCA2 Quad Micropower Precision Low-Voltage Operational Amplifier 14-SOIC
K4H560838A-TCB0 128Mb DDR SDRAM
K4H560838A-TLA0 128Mb DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H560838E-VLB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
K4H560838E-ZC/LA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838E-ZC/LB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838E-ZC/LB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
K4H560838E-ZCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)