- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373062 > K4H560838E-VLB3 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) PDF資料下載
參數(shù)資料
| 型號(hào)： | K4H560838E-VLB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格54 sTSOP與鉛二無(wú)（符合RoHS） |
| 文件頁(yè)數(shù)： | 13/19頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | K4H560838E-VLB3 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)當(dāng)前第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
AC Operating Conditions
Parameter/Condition
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
Min
Max-10
Unit
V
V
V
V
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
VREF + 0.31
VREF - 0.31
VDDQ+0.6
0.5*VDDQ+0.2
0.7
1
2
0.5*VDDQ-0.2
AC
Overshoot/Undershoot specification for Address and Control Pins
Parameter
Specification
DDR400
1.5V
1.5V
4.5V-ns
4.5V-ns
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5
0.6875
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.3125
6.5
7.0
VDD
Overshoot
Maximum Amplitude = 1.5V
Area = 4.5V-ns
Maximum Amplitude = 1.5V
undershoot
GND
V
Tims(ns)
AC overshoot/Undershoot Definition
Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H560838F-UC | 256Mb F-die DDR400 SDRAM Specification |
| K4H560838A-TCA2 | Quad Micropower Precision Low-Voltage Operational Amplifier 14-SOIC |
| K4H560838A-TCB0 | 128Mb DDR SDRAM |
| K4H560838A-TLA0 | 128Mb DDR SDRAM |
| K4H560838A-TLA2 | 128Mb DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838E-ZC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-ZC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-ZC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-ZCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-ZCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。