參數(shù)資料
型號： K4H560838M-TCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Mb DDR SDRAM
中文描述： 128MB DDR SDRAM的
文件頁數(shù)： 14/19頁
文件大?。?/td> 171K
代理商： K4H560838M-TCB0
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR400
1.2V
1.2V
2.5V-ns
2.5V-ns
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.5V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
相關(guān)PDF資料
PDF描述
K4H560838M-TLA0 128Mb DDR SDRAM
K4H560838M-TLA2 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC
K4H560838M-TLB0 128Mb DDR SDRAM
K4H560838E-ZLB3 Connector Kit; Contents Of Kit:C14610G0246001 24 position hood PG 21 double latch low profile top entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes
K4H560838E-ZCA2 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H560838M-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H560838M-TLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H560838M-TLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H560838N 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Consumer Memory
K4H560838N-LCB3000 制造商:Samsung Semiconductor 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*