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參數(shù)資料
| 型號(hào)： | K4H560838M-TCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb DDR SDRAM |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁(yè)數(shù)： | 19/19頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | K4H560838M-TCB0 |
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DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
j. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
k. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotony.
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PDF描述 |
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| K4H560838M-TLA0 | 128Mb DDR SDRAM |
| K4H560838M-TLA2 | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC |
| K4H560838M-TLB0 | 128Mb DDR SDRAM |
| K4H560838E-ZLB3 | Connector Kit; Contents Of Kit:C14610G0246001 24 position hood PG 21 double latch low profile top entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes |
| K4H560838E-ZCA2 | 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838M-TLA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H560838M-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H560838M-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H560838N | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Consumer Memory |
| K4H560838N-LCB3000 | 制造商:Samsung Semiconductor 功能描述: |
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