- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373065 > K4N26323AE-GC20 (SAMSUNG SEMICONDUCTOR CO. LTD.) 128Mbit GDDR2 SDRAM PDF資料下載
參數(shù)資料
| 型號： | K4N26323AE-GC20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit GDDR2 SDRAM |
| 中文描述： | 128Mbit GDDR2 SDRAM的 |
| 文件頁數(shù)： | 2/52頁 |
| 文件大?。?/td> | 826K |
| 代理商： | K4N26323AE-GC20 |
第1頁當(dāng)前第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
- 2 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Revision History
Revision 1.7 (January 23, 2003)
- Changed the device name from GDDR-II to GDDR2
Revision 1.6 (December 18, 2002)
- Typo corrected
Revision 1.5 (December 4, 2002)
- Typo corrected
Revision 1.4 (November 12, 2002)
- Changed the device name from DDR-II to GDDR-II
- Typo corrected
Revision 1.3 (November 8, 2002)
- Typo corrected
Revision 1.2 (November 5, 2002)
- Typo corrected
- Changed the Icc6 from 3mA to 7mA
Revision 1.1 (October 30, 2002)
- Typo corrected
Revision 1.0 (September 30, 2002)
- Changed tCK(max) from 4.5ns to 4.0ns
Revision 0.7 (September 12, 2002)
- Added IBIS curve in the spec
- Defined DC spec
- Typo corrected
- Defined Burst Write with AP (AL=0) Table.
- Defined On-die Termination Status of 2Banks System Table.
- Changed C
IN1
,C
IN2
,C
IN3
,C
out
and
C
iN4
from 3.5pF to 3.0pF
- Removed CL(Cas Latency) 8 from the spec
- Changed VDD form 2.5V + 5% to 2.5V + 0.1V
- Changed speed bin from 500/400/333MHz to 500/450/400MHz
- Changed EMRS table
Revision 0.6 (February 28, 2002)
- Changed WL(write latency) from RL(read latency) -1 to AL(additive latency) +1
- Changed tIH/tSS during EMRS from 5ns to 0.5tCK
- Changed tRCDWR
- Changed package ball location of CK, /CK, CKE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4N26323AE-GC22 | 128Mbit GDDR2 SDRAM |
| K4N26323AE-GC25 | 128Mbit GDDR2 SDRAM |
| K4N56163QF | 256Mbit gDDR2 SDRAM |
| K4N56163QF-GC | 256Mbit gDDR2 SDRAM |
| K4N56163QF-GC25 | 256Mbit gDDR2 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4N26323AE-GC22 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM |
| K4N26323AE-GC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM |
| K4N27 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
| K4N28 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
| K4N29 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。