參數(shù)資料
型號(hào): K4N56163QF-GC37
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mbit gDDR2 SDRAM
中文描述: 片256Mbit GDDR2 SDRAM的
文件頁(yè)數(shù): 13/73頁(yè)
文件大?。?/td> 1262K
代理商: K4N56163QF-GC37
- 13 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
Timing Parameters by Speed Grade
(Refer to notes for informations related to this table at the bottom)
Parameter
Symbol
- 25
- 30
- 37
Units
Notes
min
max
min
max
min
max
DQ output access time from CK/CK
tAC
-400
400
-450
+450
-500
+500
ps
DQS output access time from CK/CK
tDQSCK
-350
+350
-400
+400
-450
+450
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK half period
tHP
min
(tCL, tCH)
x
min
(tCL, tCH)
x
min
(tCL, tCH)
x
ps
20,21
Clock cycle time, CL=x
tCK
2.5
8.0
3.0
8.0
3.75
8.0
ns
24
DQ and DM input hold time
tDH
175
x
175
x
225
x
ps
15,16,17
DQ and DM input setup time
tDS
50
x
50
x
100
x
ps
15,16,17
Control & Address input pulse width
for each input
tIPW
0.6
x
0.6
x
0.6
x
tCK
DQ and DM input pulse width for
each input
tDIPW
0.35
x
0.35
x
0.35
x
tCK
Data-out high-impedance time from
CK/CK
tHZ
x
tAC max
x
tAC max
x
tAC max
ps
DQS low-impedance time from CK/
CK
tLZ
(DQS)
tAC min
tAC max
tAC min
tAC max
tAC min
tAC max
ps
27
DQ low-impedance time from CK/CK
tLZ(DQ)
2*tAC min
tAC max
2*tAC min
tAC max
2* tACmin
tAC max
ps
27
DQS-DQ skew for DQS and
associated DQ signals
tDQSQ
x
280
x
310
x
340
ps
22
DQ hold skew factor
tQHS
x
380
x
410
x
440
ps
21
DQ/DQS output hold time from DQS
tQH
tHP -
tQHS
x
tHP -
tQHS
x
tHP -
tQHS
x
ps
Write command to first DQS latching
transition
tDQSS
WL
-0.25
WL
+0.25
WL
-0.25
WL
+0.25
WL
-0.25
WL
+0.25
tCK
DQS input high pulse width
tDQSH
0.35
x
0.35
x
0.35
x
tCK
DQS input low pulse width
tDQSL
0.35
x
0.35
x
0.35
x
tCK
DQS falling edge to CK setup time
tDSS
0.2
x
0.2
x
0.2
x
tCK
DQS falling edge hold time from CK
tDSH
0.2
x
0.2
x
0.2
x
tCK
Mode register set command cycle
time
tMRD
2
x
2
x
2
x
tCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
19
Write preamble
tWPRE
0.35
x
0.35
x
0.35
x
tCK
相關(guān)PDF資料
PDF描述
K4PE68A Transient Voltage Suppressor Diodes
K4R271669A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R441869A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R441869A-N(M)CG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4N56163QG-ZC2A 制造商:Samsung Semiconductor 功能描述:
K4P24V3 制造商:AROMAT 功能描述:REPLAY 700 OHM
K4P-24V-3 制造商:AROMAT 功能描述:REPLAY 700 OHM
K4P2G324ED-AGC1000 制造商:Samsung 功能描述:K4P2G324ED-AGC1000 - Trays
K4P4G324EB-AGC1000 制造商:Samsung SDI 功能描述: 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Semiconductor 功能描述:MOBILE DDR2-P SDRAM - Trays