參數(shù)資料
型號(hào)： K4N56163QF-GC37
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Mbit gDDR2 SDRAM
中文描述： 片256Mbit GDDR2 SDRAM的
文件頁(yè)數(shù)： 14/73頁(yè)
文件大?。?/td> 1262K
代理商： K4N56163QF-GC37
- 14 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
Parameter
Symbol
- 25
- 30
- 37
Units
Notes
min
max
min
max
min
max
Address and control input hold time
tIH
475
x
475
x
475
x
ps
14,16,18
Address and control input setup time
tIS
350
x
350
x
350
x
ps
14,16,18
Read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
28
Read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
28
Active to active command period for
1KB page size
products
tRRD
7.5
x
7.5
x
7.5
x
ns
12
Active to active command period for
2KB page size products
tRRD
10
x
10
x
10
x
ns
12
Four Activate Window for 1KB page
size products
tFAW
37.5
37.5
37.5
ns
Four Activate Window for 2KB page
size products
tFAW
50
50
50
ns
CAS to CAS command delay
tCCD
2
2
2
tCK
Write recovery time
tWR
6
x
5
x
4
x
tCK
Auto precharge write recovery +
precharge time
tDAL
tWR
+tRP
x
tWR
+tRP
x
tWR
+tRP
x
tCK
23
Internal write to read command delay
tWTR
3
x
3
x
2
x
tCK
Internal read to precharge command
delay
tRTP
3
3
2
tCK
11
Exit self refresh to a non-read
command
tXSNR
tRFC + 10
tRFC + 10
tRFC +
10
ns
Exit self refresh to a read command
tXSRD
200
200
200
tCK
Exit precharge power down to any
non-read command
tXP
2
x
2
x
2
x
tCK
Exit active power down to read
command
tXARD
2
x
2
x
2
x
tCK
9
Exit active power down to read
command
(Slow exit, Lower power)
tXARDS
6-AL
6 - AL
6 - AL
tCK
9, 10
CKE minimum pulse width
(high and low pulse width)
t
CKE
3
3
3
tCK
ODT turn-on delay
t
AOND
3
3
2
2
2
2
tCK
ODT turn-on
t
AON
tAC
(min)
tAC
(max)+0.7
tAC
(min)
tAC
(max)+0.7
tAC
(min)
tAC
(max)+1
ns
13, 25
ODT turn-on(Power-Down mode)
t
AONPD
tAC
(min)
+2
3tCK+
tAC(max)
+1
tAC
(min)+2
2tCK+
tAC(max)
+1
tAC
(min)+2
2tCK+tA
C(max)+1
ns
ODT turn-off delay
t
AOFD
3.5
3.5
2.5
2.5
2.5
2.5
tCK
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