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參數(shù)資料
| 型號： | K4S161622E-TC60 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16 SDRAM |
| 中文描述： | 100萬× 16內(nèi)存 |
| 文件頁數(shù)： | 5/42頁 |
| 文件大?。?/td> | 675K |
| 代理商： | K4S161622E-TC60 |
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K4S161622E
CMOS SDRAM
Rev 1.1 Jan '03
1. Unless otherwise notes, Input level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
) in LVTTL.
2. Measured with outputs open. Addresses are changed only one time during tcc(min).
3. Refresh period is 32ms. Addresses are changed only one time during tcc(min).
4. K4S161622E-TC**
Note :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-55
-60
-70
-80
-10
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
≥
t
RC
(min)
I
o
= 0 mA
3
120
115
105
95
85
mA
2
2
-
-
95
95
80
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
2
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
15
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
5
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
3
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
3
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
25
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
15
mA
Operating Current
(Burst Mode)
I
CC4
I
o
= 0 mA
Page Burst 2Banks Activated
t
CCD
= 2CLKs
3
155
150 140 130
115
mA
2
2
-
-
115
115
100
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
3
105
100
90
90
80
mA
3
2
-
-
90
90
80
Self Refresh Current
I
CC6
CKE
≤
0.2V
1
mA
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S161622E-TC70 | 1M x 16 SDRAM |
| K4S161622E-TC80 | 1M x 16 SDRAM |
| K4S161622H | 16Mb H-die SDRAM Specification |
| K4S161622H-TC55 | 16Mb H-die SDRAM Specification |
| K4S161622H-TC60 | 16Mb H-die SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S161622E-TC70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 SDRAM |
| K4S161622E-TC70000 | 制造商:Samsung Semiconductor 功能描述: |
| K4S161622E-TC80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 SDRAM |
| K4S161622H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mb H-die SDRAM Specification |
| K4S161622H-TC55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mb H-die SDRAM Specification |
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