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參數(shù)資料
| 型號(hào)： | K4S161622H-TC60 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16Mb H-die SDRAM Specification |
| 中文描述： | 16Mb的?芯片內(nèi)存規(guī)格 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | K4S161622H-TC60 |
SDRAM 16Mb H-die(x16)
CMOS SDRAM
Rev. 1.5 August 2004
The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated
with SAMSUNG
′
s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/
O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable laten-
cies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
3.3V power supply
LVTTL compatible with multiplexed address
two banks operation
MRS cycle with address key programs
-. CAS Latency ( 2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system clock
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
32ms refresh period (2K cycle)
GENERAL DESCRIPTION
FEATURES
512K x 16Bit x 2 Banks SDRAM
ORDERING INFORMATION
Part NO.
MAX Freq.
183MHz
166MHz
143MHz
125MHz
Interface
Package
K4S161622H-TC55
K4S161622H-TC60
K4S161622H-TC70
K4S161622H-TC80
LVTTL
50pin
TSOP(II)
Row & Column address configuration
Organization
1Mx16
Row Address
A0~A10
Column Address
A0-A7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S161622H-TC70 | 16Mb H-die SDRAM Specification |
| K4S161622H-TC80 | 16Mb H-die SDRAM Specification |
| K4S1G0732B | SDRAM stacked 1Gb B-die |
| K4S1G0732B-TC75 | SDRAM stacked 1Gb B-die |
| K4S280432B | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S161622H-TC70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mb H-die SDRAM Specification |
| K4S161622H-TC80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mb H-die SDRAM Specification |
| K4S161622H-UC60 | 制造商:Samsung Semiconductor 功能描述: 制造商:SAMSG 功能描述: |
| K4S1G0732B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM stacked 1Gb B-die |
| K4S1G0732B-TC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM stacked 1Gb B-die |
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