參數(shù)資料
型號: K4S1G0732B-TC75
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: SDRAM stacked 1Gb B-die
中文描述: 1Gb的乙堆疊內(nèi)存芯片
文件頁數(shù): 3/12頁
文件大?。?/td> 126K
代理商: K4S1G0732B-TC75
CMOS SDRAM
Rev. 1.1 February 2004
SDRAM stacked 1Gb B-die (x8)
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period (8K Cycle)
FEATURES
32M x 8Bit x 4 Banks Synchronous DRAM
The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabri-
cated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system
clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable
latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
GENERAL DESCRIPTION
Part No.
Orgainization
st.128Mb x8
Max Freq.
133MHz
Interface
LVTTL
Package
54pin TSOP(II)
K4S1G0732B-TC75
Ordering Information
Organization
st.128Mx8
Row Address
A0~A12
Column Address
A0-A9, A11
Row & Column address configuration
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