參數(shù)資料
型號(hào)： K6R1016C1C-I10
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
中文描述： 64Kx16位高速CMOS靜態(tài)RAM（5.0V操作）。
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 190K
代理商： K6R1016C1C-I10
K6R1016C1C-C/C-L, K6R1016C1C-I/C-P
CMOS SRAM
Revision 4.0
September 2001
- 2 -
64K x 16 Bit High-Speed CMOS Static RAM
FEATURES
Fast Access Time 10,12,15ns(Max.)
Low Power Dissipation
Standby (TTL) : 30mA(Max.)
(CMOS) : 5mA(Max.)
0.5mA(Max.) L-ver. only
Operating K6R1016C1C-10 : 105mA(Max.)
K6R1016C1C-12 : 95mA(Max.)
K6R1016C1C-15 : 93mA(Max.)
Single 5.0V
±
10% Power Supply
TTL Compatible Inputs and Outputs
I/O Compatible with 3.3V Device
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
2V Minimum Data Retention: L-ver. only
Center Power/Ground Pin Configuration
Data Byte Control: LB: I/O
1
~ I/O
8
, UB: I/O
9
~ I/O
16
Standard Pin Configuration:
K6R1016C1C-J : 44-SOJ-400
K6R1016C1C-T: 44-TSOP2-400BF
K6R1016C1C-F: 48-Fine pitch BGA with 0.75 Ball pitch
The K6R1016C1C is a 1,048,576-bit high-speed Static Random
Access Memory organized as 65,536 words by 16 bits. The
K6R1016C1C uses 16 common input and output lines and has
at output enable pin which operates faster than address access
time at read cycle. Also it allows that lower and upper byte
access by data byte control (UB, LB). The device is fabricated
using SAMSUNG
′
s advanced CMOS process and designed for
high-speed circuit technology. It is particularly well suited for
use in high-density high-speed system applications. The
K6R1016C1C is packaged in a 400mil 44-pin plastic SOJ or
TSOP2 forward or 48-Fine pitch BGA.
GENERAL DESCRIPTION
Clk Gen.
I/O
1
~I/O
8
OE
UB
LB
CS
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Data
Cont.
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
CLK
Gen
.
Pre-Charge Circuit
Memory Array
512 Rows
128x16 Columns
I/O Circuit &
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
I/O
9
~I/O
16
WE
K6R1016C1C-C10/C12/C15
Commercial Temp.
K6R1016C1C-I10/I12/I15
Industrial Temp.
ORDERING INFORMATION
A
9
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
15
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
LB
Lower-byte Control(I/O
1
~I/O
8
)
UB
Upper-byte Control(I/O
9
~I/O
16
)
I/O
1
~ I/O
16
Data Inputs/Outputs
V
CC
Power(+5.0V)
V
SS
Ground
N.C
No Connection
相關(guān)PDF資料
PDF描述
K6R1016C1C-I12 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1C-I15 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R4004C1C-C15 1Mx4 Bit High Speed Static RAM(5V Operating).
K6R4004C1C-C20 1Mx4 Bit High Speed Static RAM(5V Operating).
K6R4004C1D-KI10 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6R1016C1C-I12 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1C-I15 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R1016C1CJC12 制造商:Samsung Semiconductor 功能描述:
K6R1016C1CTC12 制造商: 功能描述: 制造商:undefined 功能描述:
K6R1016C1C-TC12 制造商:Samsung Semiconductor 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*