- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373073 > K6R1016C1C-I10 (SAMSUNG SEMICONDUCTOR CO. LTD.) 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). PDF資料下載
參數(shù)資料
| 型號(hào)： | K6R1016C1C-I10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 64Kx16位高速CMOS靜態(tài)RAM（5.0V操作）。 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 190K |
| 代理商： | K6R1016C1C-I10 |
K6R1016C1C-C/C-L, K6R1016C1C-I/C-P
CMOS SRAM
Revision 4.0
September 2001
- 5 -
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1016C10-12
K6R1016C1C-12
K6R1016C1C-15
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
10
-
12
-
15
-
ns
Chip Select to End of Write
t
CW
7
-
8
-
9
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
7
-
8
-
9
-
ns
Write Pulse Width(OE High)
t
WP
7
-
8
-
9
-
ns
Write Pulse Width(OE Low)
t
WP1
10
-
12
-
15
-
ns
UB, LB Valid to End of Write
t
BW
7
-
8
-
9
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
5
0
6
0
7
ns
Data to Write Time Overlap
t
DW
5
-
6
-
7
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
ns
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1016C1C-10
K6R1016C1C-12
K6R1016C1C-15
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
10
-
12
-
15
-
ns
Address Access Time
t
AA
-
10
-
12
-
15
ns
Chip Select to Output
t
CO
-
10
-
12
-
15
ns
Output Enable to Valid Output
t
OE
-
5
-
6
-
7
ns
UB, LB Access Time
t
BA
-
5
-
6
-
7
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
ns
UB, LB Enable to Low-Z Output
t
BLZ
0
-
0
-
0
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
5
0
6
-
7
ns
Output Disable to High-Z Output
t
OHZ
0
5
0
6
-
7
ns
UB, LB Disable to High-Z Output
t
BHZ
0
5
0
6
-
7
ns
Output Hold from Address Change
t
OH
3
-
3
-
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
0
-
0
-
ns
Chip Selection to Power DownTime
t
PD
-
10
-
12
-
15
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB, LB=V
IL
t
AA
t
RC
t
OH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R1016C1C-I12 | 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016C1C-I15 | 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
| K6R4004C1C-C15 | 1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-C20 | 1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1D-KI10 | 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1016C1C-I12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016C1C-I15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016C1CJC12 | 制造商:Samsung Semiconductor 功能描述: |
| K6R1016C1CTC12 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| K6R1016C1C-TC12 | 制造商:Samsung Semiconductor 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。