參數(shù)資料
型號： K6R4016C1C-I15
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Kx16 Bit High Speed Static RAM(5V Operating).
中文描述： 256Kx16位高速靜態(tài)RAM（5V的工作）。
文件頁數(shù)： 6/11頁
文件大小： 184K
代理商： K6R4016C1C-I15
K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 4.0
- 6 -
September 2001
WRITE CYCLE*
* The above parameters are also guaranteed at extended and industrial temperature range.
Parameter
Symbol
K6R4016C1C-10
K6R4016C1C-12
K6R4016C1C-15
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
10
-
12
-
15
-
ns
Chip Select to End of Write
t
CW
7
-
8
-
10
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
7
-
8
-
10
-
ns
Write Pulse Width(OE High)
t
WP
7
-
8
-
10
-
ns
Write Pulse Width(OE Low)
t
WP1
10
-
12
-
15
-
ns
UB, LB Valid to End of Write
t
BW
7
-
8
-
10
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
5
0
6
0
7
ns
Data to Write Time Overlap
t
DW
5
-
6
-
7
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB, LB=V
IL
)
t
AA
t
RC
t
OH
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