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參數(shù)資料
| 型號(hào)： | K6R4016C1CE15 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit High Speed Static RAM(5V Operating). |
| 中文描述： | 256Kx16位高速靜態(tài)RAM（5V的工作）。 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 184K |
| 代理商： | K6R4016C1CE15 |
K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 4.0
- 8 -
September 2001
TIMING WAVEFORM OF WRITE CYCLE(2)
(OE =Low fixed)
Address
CS
UB, LB
WE
Data in
Data out
t
WC
t
CW(3)
t
BW
t
WP1(2)
t
DH
t
DW
t
WR(5)
t
AS(4)
t
OW
t
WHZ(6)
(10)
(9)
High-Z
Valid Data
t
AW
High-Z
TIMING WAVEFORM OF WRITE CYCLE(3)
(CS=Controlled)
Address
CS
t
AW
t
DW
t
DH
Valid Data
WE
Data in
Data out
High-Z
High-Z(8)
UB, LB
t
CW(3)
t
WP(2)
t
AS(4)
t
WC
t
WR(5)
High-Z
High-Z
t
LZ
t
WHZ(6)
t
BW
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R4016V1 | 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R4016V1D | 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6T4016U3C | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016V3C-RB70 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016V3C-RB85 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R4016C1C-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5V Operating). |
| K6R4016C1C-I10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5V Operating). |
| K6R4016C1C-I12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5V Operating). |
| K6R4016C1C-I15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5V Operating). |
| K6R4016C1C-TC15000 | 制造商:Samsung SDI 功能描述:GT |
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