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參數(shù)資料
| 型號(hào)： | K6T0808C1D-L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 32Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 170K |
| 代理商： | K6T0808C1D-L |
K6T0808C1D Family
CMOS SRAM
Revision 1.0
November 1997
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tAA
tRC
tOH
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Data Valid
High-Z
CS
Address
OE
Data out
NOTES (READ CYCLE)
1.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
tOH
tAA
tOLZ
tLZ
tOHZ
tHZ
tRC
tOE
tCO
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T0808C1D-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6T0808C1D-RB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6T0808C1D-RB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6T0808C1D-RF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6T0808C1D-RL55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
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