| 型號(hào) | 廠商 | 描述 |
| k4b4g0846b-mcf80 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
512M X 8 DDR DRAM, 0.3 ns, PBGA78 | |
| k4e640411d-tc500 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
16M X 4 EDO DRAM, 50 ns, PDSO32 | |
| k4f640411c-tc500 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
16M X 4 FAST PAGE DRAM, 50 ns, PDSO32 | |
| k4f640412c-jc450 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
16M X 4 FAST PAGE DRAM, 45 ns, PDSO32 | |
| k4t1g044qc-zcle6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
256M X 4 DDR DRAM, 0.45 ns, PBGA60 | |
| k4t56163qi-zld50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84 | |
| k5a3240yt 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| k6r1004c1c 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| k6r1004c1c-i 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| k6r1004c1c-i10 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| k6r1004c1c-i12 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| k6r1004c1c-i15 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| k6r1004c1c-i20 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| k6r1004c1c-l 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| k6r1004c1c-p 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| k6r1004c1d-jc10 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| k6r1004c1d-ji10 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| k6t0808c1d 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32Kx8 bit Low Power CMOS Static RAM |
| k6t0808c1d-l 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32Kx8 bit Low Power CMOS Static RAM |
| k6t0808c1d-p 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32Kx8 bit Low Power CMOS Static RAM |
| k6t0808c1d-rp70 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32Kx8 bit Low Power CMOS Static RAM |
| k6t0808c1d-tb55 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32Kx8 bit Low Power CMOS Static RAM |
| k6t0808c1d-tf70 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32Kx8 bit Low Power CMOS Static RAM |
| k6t0808c1d-tl55 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32Kx8 bit Low Power CMOS Static RAM |
| k6t0808c1d-tl70 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32Kx8 bit Low Power CMOS Static RAM |
| k6t1008c2c 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128K x8 bit Low Power CMOS Static RAM |
| k7n403609b-qi22 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
128K X 36 ZBT SRAM, 2.6 ns, PQFP100 | |
| k7q161854a-fc20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
1M X 18 QDR SRAM, 2.2 ns, PBGA165 | |
| k7r161884b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 QDR II b4 SRAM |
| k7r163684b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 QDR II b4 SRAM |
| k7r323682 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
| k971 2 |
THOMAS BETTS CORP | 85.05 mm2, COPPER ALLOY, TIN FINISH, RING TERMINAL |
| k972 2 |
THOMAS BETTS CORP | 85.05 mm2, COPPER ALLOY, TIN FINISH, RING TERMINAL |
| k973 2 |
THOMAS BETTS CORP | 85.05 mm2, COPPER ALLOY, TIN FINISH, RING TERMINAL |
| kbj402g |
4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE | |
| kbpc3508w 2 |
LITE-ON SEMICONDUCTOR CORP | 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| kbpc606 |
6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE | |
| kbpc608 |
6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE | |
| kbu6005 |
6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE | |
| kc-59-107 |
KINGS ELECTRONICS CO INC | CABLE TERMINATED, MALE, BNC CONNECTOR, CRIMP, PLUG |
| kc-59-239 |
KINGS ELECTRONICS CO INC | CABLE TERMINATED, MALE, BNC CONNECTOR, CRIMP, PLUG |
| kc7050a125.0000c2se00 |
CRYSTAL OSCILLATOR, CLOCK, 125 MHz, CMOS OUTPUT | |
| kc7050bfreqc51a00 |
CRYSTAL OSCILLATOR, CLOCK, 1.8 MHz - 50 MHz, CMOS OUTPUT | |
| kca2ana1bbb 2 |
THE CHERRY CORP | ROCKER SWITCH, SPST, LATCHED, 20A, 14VDC, PANEL MOUNT |
| kca2ala2rbb 2 |
THE CHERRY CORP | ROCKER SWITCH, SPDT, LATCHED, 20A, 14VDC, PANEL MOUNT |
| kd-19-101 |
KINGS ELECTRONICS CO INC | PANEL MOUNT, CABLE TERMINATED, FEMALE, C CONNECTOR, CRIMP, JACK |
| kdz6.2v 2 3 |
KEC Holdings | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| kdz6.8v 2 3 |
KEC Holdings | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| kf430bs 2 3 4 |
KEC Holdings | SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE) |
| kf430bv 2 3 4 |
KEC Holdings | SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE) |