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參數(shù)資料
| 型號： | K6T0808C1D-RP70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 32Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 170K |
| 代理商： | K6T0808C1D-RP70 |
K6T0808C1D Family
CMOS SRAM
Revision 1.0
November 1997
CL1)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS (Test Load and Test Input/Output Reference)
Input pulse level : 0.8 to 2.4V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :CL=100pF+1TTL
CL=50pF+1TTL
AC CHARACTERISTICS (Vcc=4.5~5.5V, K6T0808C1D-L Family:TA=0 to 70
°C, K6T0808C1D-P Family:TA=-40 to 85°C)
1. The parameter is tested with 50pF test load.
Parameter List
Symbol
Speed Bins
Units
551)ns
70ns
Min
Max
Min
Max
Read
Read cycle time
tRC
55
-
70
-
ns
Address access time
tAA
-
55
-
70
ns
Chip select to output
tCO
-
55
-
70
ns
Output enable to valid output
tOE
-
25
-
35
ns
Chip select to low-Z output
tLZ
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
ns
Chip disable to high-Z output
tHZ
0
20
0
30
ns
Output disable to high-Z output
tOHZ
0
20
0
30
ns
Output hold from address change
tOH
10
-
10
-
ns
Write
Write cycle time
tWC
55
-
70
-
ns
Chip select to end of write
tCW
45
-
60
-
ns
Address set-up time
tAS
0
-
0
-
ns
Address valid to end of write
tAW
45
-
60
-
ns
Write pulse width
tWP
40
-
50
-
ns
Write recovery time
tWR
0
-
0
-
ns
Write to output high-Z
tWHZ
0
20
0
25
ns
Data to write time overlap
tDW
25
-
30
-
ns
Data hold from write time
tDH
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
VDR
CS
≥Vcc-0.2V
2.0
-
5.5
V
Data retention current
IDR
Vcc=3.0V, CS
≥Vcc-0.2V
L-Ver
-
1
15
A
LL-Ver
-
0.2
3
Data retention set-up time
tSDR
See data retention waveform
0
-
ms
Recovery time
tRDR
5
-
相關(guān)PDF資料 |
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| K6T0808C1D-TB55 | 32Kx8 bit Low Power CMOS Static RAM |
| K6T0808C1D-TF70 | 32Kx8 bit Low Power CMOS Static RAM |
| K6T0808C1D-TL55 | 32Kx8 bit Low Power CMOS Static RAM |
| K6T0808C1D-TL70 | 32Kx8 bit Low Power CMOS Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T0808C1D-TB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6T0808C1D-TB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6T0808C1D-TF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6T0808C1D-TL55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
| K6T0808C1D-TL70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
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