參數(shù)資料
型號(hào)： K6T0808C1D-TL55
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 32Kx8 bit Low Power CMOS Static RAM
中文描述： 32Kx8位低功耗CMOS靜態(tài)RAM
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 170K
代理商： K6T0808C1D-TL55
K6T0808C1D Family
CMOS SRAM
Revision 1.0
November 1997
32Kx8 bit Low Power CMOS Static RAM
GENERAL DESCRIPTION
The K6T0808C1D families are fabricated by SAMSUNG
′s
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The fami-
lies also support low data retention voltage for battery back-
up operation with low data retention current.
FEATURES
Process Technology : TFT
Organization : 32Kx8
Power Supply Voltage : 4.5~5.5V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 28-DIP-600B, 28-SOP-450
28-TSOP1-0813.4 F/R
PIN DESCRIPTION
Pin Name
Function
Pin Name
Function
CS
Chip Select Input
I/O1~I/O8
Data Inputs/Outputs
OE
Output Enable Input
Vcc
Power
WE
Write Enable Input
Vss
Ground
A0~A14
Address Inputs
NC
No connect
PRODUCT FAMILY
1. The parameter is tested with 50pF test load.
Product Family
Operating Temperature
VCC Range
Speed
Power Dissipation
PKG Type
Standby
(ISB1, Max)
Operating
(Icc2, Max)
K6T0808C1D-L
Commercial (0~70
°C)
4.5 to 5.5V
551)/70ns
30
A
60mA
28-DIP,28-SOP
28-TSOP1-F/R
K6T0808C1D-B
5
A
K6T0808C1D-P
Industrial (-40~85
°C)
70ns
30
A
28-SOP
28-TSOP1-F/R
K6T0808C1D-F
5
A
FUNCTIONAL BLOCK DIAGRAM
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
28-DIP
28-SOP
15
16
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A11
A9
A8
A13
WE
VCC
A3
A14
A12
A7
A6
A5
A4
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
28-TSOP
Type1 - Forward
1
2
3
4
5
6
7
8
9
10
11
12
13
14
27
26
28
25
24
23
22
21
20
19
18
17
16
15
OE
28-TSOP
A11
A9
A8
A13
WE
VCC
A3
A14
A12
A7
A6
A5
A4
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
27
26
28
25
24
23
22
21
20
19
18
17
16
15
OE
Type1 - Reverse
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
256 rows
128
×8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A10 A3
A0
A1
A2
A11
A9
A13
A8
A12
A14
A4
A5
A7
CS
WE
I/O1
Data
cont
Data
cont
OE
I/O8
A6
Control
Logic
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6T0808C1D-TL70 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM
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K6T0808V1D-GB70 制造商:Samsung Semiconductor 功能描述:
K6T0808V1D-TD70 制造商:SAMSG 功能描述:
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