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參數(shù)資料
| 型號： | K6T4016V3C-RB10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 154K |
| 代理商： | K6T4016V3C-RB10 |
K6T4016V3C, K6T4016U3C Family
CMOS SRAM
Revision 2.01
October 2001
1
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No
0.0
0.1
0.11
1.0
2.0
2.01
Remark
Advance
Preliminary
Final
Final
Final
History
Initial draft
Revise
- Speed bin change
Commercial: 70/85ns to 70/85/100ns
Industrial: 85/100ns to 70/85/100ns
- DC Characteristics change
I
CC
: 5mA at read/write to 4mA at read
I
CC1
: 5mA to 6mA
I
CC2
: 50mA to 45mA
I
SB
: 0.5mA to 0.3mA
I
SB1
: 10
μ
A to 15
μ
A for commercial parts
Errata correction
Finalize
Revise
- Add K6T4016V3C-TB55 product
Revise
- Improved V
OH
(output high voltage) from 2.2V to 2.4V.
Draft Date
January 13, 1998
June 12, 1998
August 13, 1998
November 16, 1998
June 26, 2001
October 15, 2001
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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相關代理商/技術參數(shù) |
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| K6T4016V3C-RB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016V3C-RB85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016V3C-RF10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016V3C-RF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4016V3C-RF85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
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