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參數(shù)資料
| 型號(hào)： | K6T8016C3M-RF55 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx16 bit Low Power CMOS Static RAM |
| 中文描述： | 512Kx16位低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | K6T8016C3M-RF55 |
K6T8016C3M Family
Revision 1.01
April 2000
6
CMOS SRAM
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
t
RC
CS
Address
UB, LB
OE
Data out
t
AA
t
RC
t
OH
t
OH
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
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| K6T8016C3M-RF70 | 512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TB55 | 512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TB70 | 512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TF55 | 512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TF70 | 512Kx16 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T8016C3M-RF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TB55000 | 制造商:Samsung SDI 功能描述: |
| K6T8016C3M-TB70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
| K6T8016C3M-TF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM |
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