參數(shù)資料
型號: K6T8016C3M-RF55
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Kx16 bit Low Power CMOS Static RAM
中文描述: 512Kx16位低功耗CMOS靜態(tài)RAM
文件頁數(shù): 9/9頁
文件大?。?/td> 146K
代理商: K6T8016C3M-RF55
K6T8016C3M Family
Revision 1.01
April 2000
9
CMOS SRAM
Unit: millimeters(inches)
PACKAGE DIMENSIONS
44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R)
0
#1
0
#22
#44
#23
0.35
±
0.10
0.014
±
0.004
0.80
0.0315
M
1.20MAX.
18.41
±
0.10
0.725
±
0.004
0.741
11.76
±
0.20
0.463
±
0.008
+ 0.10
- 0.05
+ 0.004
- 0.002
0.15
0.006
1
0
0.10
0.004
0~8
°
0.45 ~0.75
0.018 ~ 0.030
( 0.010
(0.020
( 0.032
MAX
1.00
±
0.10
0.039
±
0.004
44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)
0
#1
0
#22
#44
#23
0.35
±
0.10
0.014
±
0.004
0.80
0.0315
M
1.20MAX.
18.41
±
0.10
0.725
±
0.004
0.741
11.76
±
0.20
0.463
±
0.008
+ 0.10
- 0.05
+ 0.004
- 0.002
0.15
0.006
1
0
0.10
0.004
0~8
°
0.45 ~0.75
0.018 ~ 0.030
( 0.010
(0.020
( 0.032
MAX
1.00
±
0.10
0.039
±
0.004
相關(guān)PDF資料
PDF描述
K6T8016C3M-RF70 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-TB55 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-TB70 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-TF55 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-TF70 512Kx16 bit Low Power CMOS Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6T8016C3M-RF70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-TB55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-TB55000 制造商:Samsung SDI 功能描述:
K6T8016C3M-TB70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-TF55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx16 bit Low Power CMOS Static RAM