參數(shù)資料
型號: K6X1008T2D-TF70
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類: DRAM
英文描述: 128Kx8 bit Low Power CMOS Static RAM
中文描述: 128Kx8位低功耗CMOS靜態(tài)RAM
文件頁數(shù): 7/9頁
文件大?。?/td> 153K
代理商: K6X1008T2D-TF70
CMOS SRAM
K6X1008T2D Family
Revision 1.0
September 2003
7
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
CS
1
t
WC
t
WR(4)
t
AS(3)
t
DW
t
DH
Data Valid
WE
Data in
Data out
High-Z
High-Z
CS
2
t
CW(2)
t
WP(1)
t
AW
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
1
t
CW(2)
t
WR(4)
CS
2
t
CW(2)
t
WP(1)
t
DW
t
DH
t
OW
t
WHZ
Data Undefined
Data Valid
WE
Data in
Data out
t
WC
t
AW
t
AS(3)
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