- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373080 > K7B801825B-QC75 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | K7B801825B-QC75 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| 中文描述： | 256Kx36 |
| 文件頁(yè)數(shù)： | 16/18頁(yè) |
| 文件大?。?/td> | 400K |
| 代理商： | K7B801825B-QC75 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)第18頁(yè)
K7A801809B
256Kx36 & 512Kx18 Synchronous SRAM
- 16 -
Rev 3.0
Nov. 2003
K7A803609B
APPLICATION INFORMATION
DEPTH EXPANSION
The Samsung 256Kx36 Synchronous Pipelined Burst SRAM has two additional chip selects for simple depth expansion.
This permits easy secondary cache upgrades from 256K depth to 512K depth without extra logic.
Data
Address
CLK
ADS
CS
2
CS
2
CLK
ADSC
WEx
OE
CS
1
Address Data
ADV
ADSP
256Kx36
SPB
SRAM
(Bank 0)
CS
2
CS
2
CLK
ADSC
WEx
OE
CS
1
Address Data
ADV
ADSP
256Kx36
SPB
SRAM
(Bank 1)
CLK
Address
Cache
Controller
A
[0:18]
A
[18]
A
[0:17]
A
[18]
A
[0:17]
I/O
[0:71]
Microprocessor
INTERLEAVE READ TIMING
(Refer to non-interleave write timing for interleave write timing)
(ADSP CONTROLLED , ADSC=HIGH)
Clock
ADSP
ADDRESS
[0:n]
Data Out
(Bank 0)
Bank 0 is selected by
CS
2
, and Bank 1 deselected by
CS
2
Q1-1
Q1-2
Q1-4
Q1-3
OE
Data Out
(Bank 1)
t
SS
t
SH
A1
A2
WRITE
CS
1
A
n+1
ADV
Q2-2
Q2-4
Q2-3
t
AS
t
AH
t
WS
t
WH
t
ADVS
t
ADVH
t
OE
t
LZOE
t
HZC
Bank 0 is deselected by
CS
2
, and Bank 1 selected by
CS
2
t
CSS
t
CSH
CD
t
LZC
Q2-1
Don
′
t Care
Undefined
*Notes :
n = 14 32K depth , 15 64K depth
16 128K depth , 17 256K depth
18 512K depth
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7B803625B-QC65 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7B161825A | Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 25x30 mm; Packaging: Bulk |
| K7B163625A | Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 250V; Case Size: 25x40 mm; Packaging: Bulk |
| K7A161800A | Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 35x25 mm; Packaging: Bulk |
| K7A161801A | Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 22x50 mm; Packaging: Bulk |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7B801825B-QC75000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 9M-Bit 512K x 18 7.5ns 100-Pin TQFP Tray |
| K7B801825M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Synchronous SRAM |
| K7B803625 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7B803625B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Synchronous SRAM |
| K7B803625B-PC65T00 | 制造商:Samsung Semiconductor 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。