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參數(shù)資料
| 型號(hào)： | K7I161882B-FC16 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| 中文描述： | 512Kx36位，1Mx18位首席信息官b2條DDRII的SRAM |
| 文件頁(yè)數(shù)： | 10/17頁(yè) |
| 文件大?。?/td> | 378K |
| 代理商： | K7I161882B-FC16 |
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512Kx36 & 1Mx18 DDRII CIO b2 SRAM
- 10 -
Rev 3.1
July. 2004
K7I163682B
K7I161882B
Note:
For power-up, V
IH
≤
V
DDQ
+0.3V and V
DD
≤
1.7V and V
DDQ
≤
1.4V t
≤
200ms
V
DDQ
V
IL
V
DDQ
+0.5V
20% t
KHKH
(MIN)
V
SS
V
IH
V
SS
-0.5V
20% t
KHKH
(MIN)
Undershoot Timing
Overershoot Timing
OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
70
°
C)
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
V
DD
1.7
1.9
V
V
DDQ
1.4
1.9
V
Reference
Voltage
V
REF
0.68
0.95
V
Ground
V
SS
0
0
V
V
DDQ
/2
50
SRAM
Zo=50
0.75V
V
REF
ZQ
250
AC TEST OUTPUT LOAD
AC TEST CONDITIONS
Note
: Parameters are tested with RQ=250
Parameter
Symbol
Value
Unit
Core Power Supply Voltage
V
DD
1.7~1.9
V
Output Power Supply Voltage
V
DDQ
1.4~1.9
V
Input High/Low Level
V
IH
/V
IL
1.25/0.25
V
Input Reference Level
V
REF
0.75
V
Input Rise/Fall Time
T
R
/T
F
0.3/0.3
ns
Output Timing Reference Level
V
DDQ
/2
V
AC ELECTRICAL CHARACTERISTICS
(V
DD
=1.8V
±
0.1V, T
A
=0
°
C to +70
°
C)
Notes:
1. This condition is for AC function test only, not for AC parameter test.
2. To maintain a valid level, the transitioning edge of the input must :
a) Sustain a constant slew rate from the current AC level through the target AC level, V
IL(AC)
or V
IH(AC)
b) Reach at least the target AC level
c) After the AC target level is reached, continue to maintain at least the target DC level, V
IL(DC)
or V
IH(DC)
PARAMETER
SYMBOL
MIN
MAX
UNIT
NOTES
Input High Voltage
V
IH
(AC)
V
REF
+ 0.2
-
V
1,2
Input Low Voltage
V
IL
(AC)
-
V
REF
- 0.2
V
1,2
V
DDQ
+0.25V
V
SS
-0.25V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7I161882B-FC20 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I161882B-FC25 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I161882B-FC30 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I161884B | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDRII CIO b4 SRAM |
| K7I161884B-FC25T00 | 制造商:Samsung Semiconductor 功能描述:16MSYNC DDRII, COMMON I/O SRAM 1MX18FBGA, T/R - Tape and Reel |
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