- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373081 > K7I643684M-FI30 (SAMSUNG SEMICONDUCTOR CO. LTD.) 72Mb DDRII SRAM Specification PDF資料下載
參數(shù)資料
| 型號(hào)： | K7I643684M-FI30 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 72Mb DDRII SRAM Specification |
| 中文描述： | 72Mb SRAM的規(guī)范條DDRII |
| 文件頁(yè)數(shù)： | 7/18頁(yè) |
| 文件大小： | 424K |
| 代理商： | K7I643684M-FI30 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)
2Mx36 & 4Mx18 DDRII CIO b4 SRAM
K7I643684M
K7I641884M
- 7 -
Rev. 1.3 March 2007
Depth Expansion
Separate input and output ports enables easy depth expansion.
Each port can be selected and deselected independently and read and write operation do not affect each other.
Before chip deselected, all read and write pending operations are completed.
Clock Consideration
K7I643684M and K7I641884M utilizes internal DLL(Delay-Locked Loops) for maximum output data valid window.
It can be placed into a stopped-clock state to minimize power with a modest restart time of 1024 clock cycles.
Circuitry automatically resets the DLL when absence of input clock is detected.
The following power-up supply voltage application is recommended: V
SS
, V
DD
, V
DDQ
, V
REF
, then V
IN
. V
DD
and V
DDQ
can be applied
simultaneously, as long as V
DDQ
does not exceed V
DD
by more than 0.5V during power-up. The following power-down supply voltage
removal sequence is recommended: V
IN
, V
REF
, V
DDQ
, V
DD
, V
SS
. V
DD
and V
DDQ
can be removed simultaneously, as long as V
DDQ
does not exceed V
DD
by more than 0.5V during power-down.
Power-Up/Power-Down Supply Voltage Sequencing
Echo clock operation
To assure the output traceability, the SRAM provides the output Echo clock, pair of compliment clock CQ and CQ,
which are synchronized with internal data output.
Echo clocks run free during normal operation.
The Echo clock is triggered by internal output clock signal, and transferred to external through same structures as output driver.
Programmable Impedance Output Buffer Operation
The designer can program the SRAM's output buffer impedance by terminating the ZQ pin to V
SS
through a precision resistor(RQ).
The value of RQ (within 15%) is five times the output impedance desired.
For example, 250
resistor will give an output impedance of 50
.
Impedance updates occur early in cycles that do not activate the outputs, such as deselect cycles.
In all cases impedance updates are transparent to the user and do not produce access time "push-outs" or other anomalous
behavior in the SRAM.
There are no power up requirements for the SRAM. However, to guarantee optimum output driver impedance after power up, the
SRAM needs 1024 non-read cycles.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7M161835B-QC65 | 512Kx36 & 1Mx18 Pipelined NtRAM |
| K7N161831B | 512Kx36 & 1Mx18 Pipelined NtRAM |
| K7N163631B | 512Kx36 & 1Mx18 Pipelined NtRAM |
| K7N163631B-QC16 | 512Kx36 & 1Mx18 Pipelined NtRAM |
| K7M161835B-QCI65 | 512Kx36 & 1Mx18 Pipelined NtRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7-J | 制造商:MITSUMI 制造商全稱:Mitsumi Electronics, Corp. 功能描述:Adjustable Type Coils |
| K7J161882B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDR II SIO b2 SRAM |
| K7J161882B-FC30000 | 制造商:Samsung SDI 功能描述:16MSYNC |
| K7J161882B-FC30T00 | 制造商:Samsung Semiconductor 功能描述:16MSYNC DDRII, SEPARATE I/O SRAM 1MX18FBGA, T/R - Tape and Reel |
| K7J161882B-FI25000 | 制造商:Samsung Semiconductor 功能描述:16MSYNC DDRII, SEPARATE I/O SRAM 1MX18FBGA - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。