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參數(shù)資料
| 型號： | K7N323645M-QC25 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| 中文描述： | 1Mx36 |
| 文件頁數(shù)： | 1/18頁 |
| 文件大小： | 211K |
| 代理商： | K7N323645M-QC25 |
1Mx36 & 2Mx18 Flow-Through N
t
RAM
TM
- 1 -
Rev 2.0
Nov. 2003
K7M321825M
K7M323625M
Document Title
1Mx36 & 2Mx18-Bit Flow Through N
t
RAM
TM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
1.0
1.1
2.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
History
1. Initial document.
1. Add 165FBGA package
1. Update JTAG scan order
1. Change pin out for 165FBGA
- x18/x36 ; 11B => from A to NC , 2R ==> from NC to A
1. Insert pin at JTAG scan order of 165FBGA in connection with
pin out change
- x18/x36 ; insert Pin ID of 2R to BIT number of 69
1. Add Icc, Isb, Isb1 and Isb2 values.
1. Final datasheet release.
1. Change the Stand-by current (Isb)
Before After
Isb - 65 : 100 140
- 75 : 90 130
- 85 : 80 130
Isb1 : 90 110
Isb2 : 80 100
1. Delete the 119BGA and 165FBGA package
2. Delete the 6.5ns and 8.5ns speed bin
Draft Date
May. 10. 2001
Aug. 29. 2001
Dec. 03. 2001
Feb. 14. 2002
Apr. 20. 2002
May. 10. 2002
Sep. 26. 2002
Oct. 17. 2003
Nov. 18, 2003
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