| 型號(hào) | 廠商 | 描述 |
| k7n161801a-q(f)c(i)13 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n161801a-q(f)c(i)16 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n161801a-q(f)c(i)20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n161801a-q(f)c(i)25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n161845a-q(f)c(i)13 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n161845a-q(f)c(i)16 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n161845a-q(f)c(i)20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n161845a-q(f)c(i)25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n163601a-q(f)c(i)13 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n163601a-q(f)c(i)16 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n163601a-q(f)c(i)20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n163601a-q(f)c(i)25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n163645a-q(f)c(i)13 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n163645a-q(f)c(i)16 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n163645a-q(f)c(i)20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n163645a-q(f)c(i)25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n163601 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n161845a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7n163645a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Kx36 & 1Mx18 Pipelined NtRAM |
| k7m321825m-qc75 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7m323625m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7m323625m-qc75 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7n321801m-qc20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7n321801m-qc25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7n321845m-qc20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7n321845m-qc25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7n323601m-qc20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7n323601m-qc25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7n323645m-qc20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7n323645m-qc25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7m321825m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18 Flow-Through NtRAM |
| k7n321801m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18-Bit Pipelined NtRAM |
| k7n323601m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx36 & 2Mx18-Bit Pipelined NtRAM |
| k7n401801a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM |
| k7n403601a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM |
| k7n401801b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Flash - NOR IC; NOR Flash Type:Page Mode Access; Memory Size:256MB; Memory Configuration:128K x 16; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Supply Voltage Max:3.6V |
| k7n401801b-qc13 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256 Megabit, 3.0 Volt-only Page Mode Flash Memory |
| k7n403601b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Kx36 & 256Kx18 Pipelined NtRAM |
| k7n801849b-qc25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:10R; Tolerance, resistance:20%; Beta value:2900; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes |
| k7n801801b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| k7n803601b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| k7m801825b-qc75 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| k7m803625b-qc75 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| k7n801801b-qc13 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| k7n801845b-qc13 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| k7n803601b-qc13 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| k7n803645b-qc13 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| k7n803649b-qc25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes |
| k7n801801b-qc16 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| k7n801809b-qc25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | V7 Series Miniature Basic Switch, Single Pole Double Throw Circuitry, 11 A at 277 Vac, Straight Lever Actuator, 0,49 N [1.7 oz] Maximum Operating Force, Silver Contacts, Quick Connect Termination, CSA, UL |