- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373082 > K7N801809B-QC25 (SAMSUNG SEMICONDUCTOR CO. LTD.) V7 Series Miniature Basic Switch, Single Pole Double Throw Circuitry, 11 A at 277 Vac, Straight Lever Actuator, 0,49 N [1.7 oz] Maximum Operating Force, Silver Contacts, Quick Connect Termination, CSA, UL PDF資料下載
參數(shù)資料
| 型號： | K7N801809B-QC25 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | V7 Series Miniature Basic Switch, Single Pole Double Throw Circuitry, 11 A at 277 Vac, Straight Lever Actuator, 0,49 N [1.7 oz] Maximum Operating Force, Silver Contacts, Quick Connect Termination, CSA, UL |
| 中文描述： | 256Kx36 |
| 文件頁數(shù)： | 12/18頁 |
| 文件大?。?/td> | 378K |
| 代理商： | K7N801809B-QC25 |
256Kx36 & 512Kx18 Pipelined N
t
RAM
TM
- 12 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
SLEEP MODE
SLEEP MODE is a low current, power-down mode in which the device is deselected and current is reduced to I
SB2
. The duration of
SLEEP MODE is dictated by the length of time the ZZ is in a High state.
After entering SLEEP MODE, all inputs except ZZ become disabled and all outputs go to High-Z
The ZZ pin is an asynchronous, active high input that causes the device to enter SLEEP MODE.
When the ZZ pin becomes a logic High, I
SB2
is guaranteed after the time t
ZZI
is met. Any operation pending when entering SLEEP
MODE is not guaranteed to successful complete. Therefore, SLEEP MODE (READ or WRITE) must not be initiated until valid pend-
ing operations are completed. similarly, when exiting SLEEP MODE during t
PUS
, only a DESELECT or READ cycle should be given
while the SRAM is transitioning out of SLEEP MODE.
SLEEP MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
Current during SLEEP MODE
ZZ
≥
V
IH
I
SB2
60
mA
ZZ active to input ignored
t
PDS
2
cycle
ZZ inactive to input sampled
t
PUS
2
cycle
ZZ active to SLEEP current
t
ZZI
2
cycle
ZZ inactive to exit SLEEP current
t
RZZI
0
K
t
PDS
ZZ setup cycle
t
RZZI
ZZ
Isupply
All inputs
(except ZZ)
Outputs
(Q)
t
ZZI
t
PUS
ZZ recovery cycle
Deselect or Read Only
High-Z
DON
′
T CARE
I
SB2
SLEEP MODE WAVEFORM
Normal
operation
cycle
Deselect or Read Only
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7M801825B-QC65 | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7M803625B-QC65 | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7N803601B-QC16 | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7N803609B-QC25 | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7N801845B-QC16 | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7N801845B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Pipelined NtRAM |
| K7N801845B-QC13 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7N801845B-QC13000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Sync Dual 2.5V 9M-Bit 512K x 18 4.2ns 100-Pin TQFP Tray |
| K7N801845B-QC16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7N801845B-QC16/13 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Flow Through NtRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。