參數(shù)資料
型號： K7N803601B-QC13
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Kx36 & 512Kx18-Bit Pipelined NtRAM
中文描述： 256Kx36
文件頁數(shù)： 11/18頁
文件大?。?/td> 378K
代理商： K7N803601B-QC13
256Kx36 & 512Kx18 Pipelined N
t
RAM
TM
- 11 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
AC TIMING CHARACTERISTICS
(V
DD
=3.3V+0.165V/-0.165V, T
A
=0 to 70
°
C)
Notes :
1. The above parameters are also guaranteed at industrial temperature range.
2. All address inputs must meet the specified setup and hold times for all rising clock(CLK) edges when ADV is sampled low and CS is sampled
low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
3. Chip selects must be valid at each rising edge of CLK(when ADV is Low) to remain enabled.
4. A write cycle is defined by WE low having been registered into the device at ADV Low, A Read cycle is defined by WE High with ADV Low,
Both cases must meet setup and hold times.
5. To avoid bus contention, At a given voltage and temperature t
LZC
is more than t
HZC.
The specs as shown do not imply bus contention because t
LZC
is a Min. parameter that is worst case at totally different test conditions
(0
°
C,3.465V) than t
HZC
, which is a Max. parameter(worst case at 70
°
C,3.135V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
PARAMETER
SYMBOL
-16
-13
UNIT
MIN
MAX
MIN
MAX
Cycle Time
t
CYC
6.0
-
7.5
-
ns
Clock Access Time
t
CD
-
3.5
-
4.2
ns
Output Enable to Data Valid
t
OE
-
3.5
-
4.2
ns
Clock High to Output Low-Z
t
LZC
1.5
-
1.5
-
ns
Output Hold from Clock High
t
OH
1.5
-
1.5
-
ns
Output Enable Low to Output Low-Z
t
LZOE
0
-
0
-
ns
Output Enable High to Output High-Z
t
HZOE
-
3.0
-
3.5
ns
Clock High to Output High-Z
t
HZC
-
3.0
-
3.5
ns
Clock High Pulse Width
t
CH
2.2
-
3.0
-
ns
Clock Low Pulse Width
t
CL
2.2
-
3.0
-
ns
Address Setup to Clock High
t
AS
1.5
-
1.5
-
ns
CKE Setup to Clock High
t
CES
1.5
-
1.5
-
ns
Data Setup to Clock High
t
DS
1.5
-
1.5
-
ns
Write Setup to Clock High (WE, BW
X
)
t
WS
1.5
-
1.5
-
ns
Address Advance Setup to Clock High
t
ADVS
1.5
-
1.5
-
ns
Chip Select Setup to Clock High
t
CSS
1.5
-
1.5
-
ns
Address Hold from Clock High
t
AH
0.5
-
0.5
-
ns
CKE Hold from Clock High
t
CEH
0.5
-
0.5
-
ns
Data Hold from Clock High
t
DH
0.5
-
0.5
-
ns
Write Hold from Clock High (WE, BWE
X
)
t
WH
0.5
-
0.5
-
ns
Address Advance Hold from Clock High
t
ADVH
0.5
-
0.5
-
ns
Chip Select Hold from Clock High
t
CSH
0.5
-
0.5
-
ns
ZZ High to Power Down
t
PDS
2
-
2
-
cycle
ZZ Low to Power Up
t
PUS
2
-
2
-
cycle
Output Load(B),
(for t
LZC
, t
LZOE
, t
HZOE
& t
HZC
)
Dout
353
/
1538
5pF*
+3.3V for 3.3V I/O
/+2.5V for 2.5V I/O
319
/
1667
Fig. 1
* Including Scope and Jig Capacitance
Output Load(A)
Dout
Zo=50
RL=50
VL=1.5V for 3.3V I/O
V
DDQ
/2 for 2.5V I/O
30pF*
相關(guān)PDF資料
PDF描述
K7N803645B-QC13 256Kx36 & 512Kx18-Bit Pipelined NtRAM
K7N803649B-QC25 THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
K7N801801B-QC16 256Kx36 & 512Kx18-Bit Pipelined NtRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7N803601B-QC16 制造商:Samsung Semiconductor 功能描述:
K7N803601B-QC16/13 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Flow Through NtRAM
K7N803609B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Pipelined NtRAM
K7N803609B-PC25000 制造商:Samsung SDI 功能描述:SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 100-Pin TQFP Tray
K7N803609B-PC25T00 制造商:Samsung Semiconductor 功能描述:8MSYNCSYNC PIPELINED BURST SRAMX36LQFP, T/R - Tape and Reel
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