參數(shù)資料
型號： K8D1716UBC-TC09
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
中文描述： 1,600位（200萬x8/1M x16）的雙銀行NOR閃存
文件頁數(shù)： 13/41頁
文件大?。?/td> 684K
代理商： K8D1716UBC-TC09
FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
13
WE
555H/
AAAH
2AAH/
555H
555H/
AAAH
AAH
55H
80H
555H/
AAAH
Block Erase
Start
DQ15-DQ0
2AAH/
555H
Block
Address
AAH
55H
30H
RY/BY
WE
DQ15-DQ0
Figure 7. Erase Suspend/Resume Command Sequence
Erase Suspend / Resume
The Erase Suspend command interrupts the Block Erase to read or program data in a block that is not being erased. The Erase Sus-
pend command is only valid during the Block Erase operation including the time window of 50
μ
s. The Erase Suspend command is
not valid while the Chip Erase
or the Internal Program Routine sequence is running.
When the Erase Suspend command is written during a Block Erase operation, the device requires a maximum of 20
μ
s to suspend
the erase operation. But, when the Erase Suspend command is written during the block erase time window (50
μ
s) , the device imme-
diately terminates the block erase time window and suspends the erase operation.
After the erase operation has been suspended, the device is availble for reading or programming data in a block that is not being
erased. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode.
When the Erase Resume command is executed, the Block Erase operation will resume. When the Erase Suspend or Erase Resume
command is executed, the addresses are in Don't Care state.
Figure 6. Block Erase Command Sequence
A19
～
A0(x16)/
A19
～
A-1(x8)
A19
～
A0(x16)/
A19
～
A-1(x8)
555H/
AAAH
Block
Address
AAH
30H
XXXH
Erase
Resume
XXXH
B0H
30H
Erase
Suspend
Block Erase
Start
Block Erase
Command Sequence
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