- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373086 > K8D1716UBC-TC09 (SAMSUNG SEMICONDUCTOR CO. LTD.) 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory PDF資料下載
參數(shù)資料
| 型號： | K8D1716UBC-TC09 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 1,600位（200萬x8/1M x16）的雙銀行NOR閃存 |
| 文件頁數(shù)： | 2/41頁 |
| 文件大?。?/td> | 684K |
| 代理商： | K8D1716UBC-TC09 |
第1頁當前第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁
FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
2
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
The K8D1716U featuring single 3.0V power supply, is a 16Mbit
NOR-type Flash Memory organized as 2Mx8 or 1M x16. The
memory architecture of the device is designed to divide its
memory arrays into 39 blocks to be protected by the block
group. This block architecture provides highly flexible erase and
program capability. The K8D1716U NOR Flash consists of two
banks. This device is capable of reading data from one bank
while programming or erasing in the other bank. Access times
of 70ns, 80ns and 90ns are available for the device. The
device
′
s fast access times allow high speed microprocessors to
operate without wait states. The device performs a program
operation in units of 8 bits (Byte) or 16 bits (Word) and erases in
units of a block. Single or multiple blocks can be erased. The
block erase operation is completed within typically 0.7 sec. The
device requires 15mA as program/erase current in the standard
and industrial temperature ranges.
The K8D1716U NOR Flash Memory is created by using Sam-
sung's advanced CMOS process technology. This device is
available in 48 pin TSOP1 and 48 ball FBGA package. The
device is compatible with EPROM applications to require high-
density and cost-effective nonvolatile read/write storage solu-
tions.
FEATURES
Single Voltage, 2.7V to 3.6V for Read and Write operations
Organization
1,048,576 x 16 bit (Word mode)
Fast Read Access Time : 70ns
Read While Program/Erase Operation
Dual Bank architectures
Bank 1 / Bank 2 : 8Mb / 8Mb
Secode(Security Code) Block : Extra 64K Byte block
Power Consumption (typical value @5MHz)
- Read Current : 14mA
- Program/Erase Current : 15mA
- Read While Program or Read While Erase Current : 25mA
- Standby Mode/Auto Sleep Mode : 5
μ
A
WP/ACC input pin
- Allows special protection of two outermost boot blocks at V
IL
,
regardless of block protect status
- Removes special protection of two outermost boot block at V
IH,
the two blocks return to normal block protect status
- Program time at V
HH
: 9
μ
s/word
Erase Suspend/Resume
Unlock Bypass Program
Hardware RESET Pin
Command Register Operation
Block Group Protection / Unprotection
Supports Common Flash Memory Interface
Industrial Temperature : -40
°
C to 85
°
C
Endurance : 100,000 Program/Erase Cycles Minimum
Data Retention : 10 years
Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch
48 Ball FBGA :
6 x 8.5 mm / 0.8 mm Ball pitch
GENERAL DESCRIPTION
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
PIN DESCRIPTION
Pin Name
Pin Function
A0 - A19
Address Inputs
DQ0 - DQ14
Data Inputs / Outputs
DQ15/A-1
DQ15 Data Input / Output
A-1 LSB Address
BYTE
Word / Byte Selection
CE
Chip Enable
OE
Output Enable
RESET
Hardware Reset Pin
RY/BY
Ready/Busy Output
WE
Write Enable
WP/ACC
Hardware Write Protection/Program
Acceleration
Vcc
Power Supply
V
SS
Ground
N.C
No Connection
PIN CONFIGURATION
48-pin TSOP1
Standard Type
12mm x 20mm
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
A19
N.C
WE
RESET
N.C
WP/ACC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
Vss
CE
A0
Note :
Please refer to the package dimension.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K8D1716UBC-TI07 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UBC-TI08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UBC-TI09 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-DC07 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K8D1716UBC-TI07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UBC-TI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UBC-TI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UQB-PI07000 | 制造商:Samsung Semiconductor 功能描述:16M DUAL BANK BOOT X8/X16 TSOP1 90 NM - Trays |
| K8D1716UT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。