參數(shù)資料
型號(hào)： K8D1716UTC-FC07
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
中文描述： 1,600位（200萬(wàn)x8/1M x16）的雙銀行NOR閃存
文件頁(yè)數(shù)： 9/41頁(yè)
文件大小： 684K
代理商： K8D1716UTC-FC07
FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
9
Notes :
1. RA : Read Address, PA : Program Address, RD : Read Data, PD : Program Data
DA : Dual Bank Address, BA : Block Address (A12 - A19), X = Don’t care .
2. To terminate the Autoselect Mode, it is necessary to write Reset command to the register.
3. The 4th cycle data of Autoselect mode is output data.
The 3rd and 4th cycle bank addresses of Autoselect mode must be same.
4. The Read / Program operations at non-erasing blocks and the autoselect mode are allowed in the Erase Suspend mode.
5. The Erase Suspend command is applicable only to the Block Erase operation.
6. Command is valid when the device is in read mode or Autoselect mode.
7. DQ8 - DQ15 are don’t care in command sequence, but RD and PD is excluded.
8. A11 - A19 are also don’t care, except for the case of special notice.
Description
CE
OE
WE
A19
to
A12
A11
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ8 to DQ15
DQ7
to
DQ0
BYTE
=V
IH
BYTE
=V
IL
Manufacturer ID
L
L
H
DA
X
V
ID
X
L
X
L
L
X
X
ECH
Device Code K8D1716UT
(Top Boot Block)
L
L
H
DA
X
V
ID
X
L
X
L
H
22H
X
75H
Device Code K8D1716UB
(Bottom Boot Block)
L
L
H
DA
X
V
ID
X
L
X
L
H
22H
X
77H
Block Protection
Verification
L
L
H
BA
X
V
ID
X
L
X
H
L
X
X
01H (Protected),
00H (Unprotected)
Secode
Block (2)
Indicator Bit (DQ7)
L
L
H
DA
X
V
ID
X
L
X
H
H
X
X
80H (Factory locked),
00H (Not factory locked)
Table 9. K8D1716U Autoselect Codes, (High Voltage Method)
Notes :
1. L=Logic Low=V
IL
, H=Logic High=V
IH
, DA=Dual Bank Address, BA=Block Address, X=Don’t care
.
2. Secode Block : Security Code Block.
相關(guān)PDF資料
PDF描述
K8D1716UTC-FC08 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-FC09 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-FI07 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-FI08 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-FI09 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K8D1716UTC-FC08 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-FC09 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-FI07 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-FI08 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-FI09 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
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