參數(shù)資料
型號: K8D1716UTC-PC07
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
中文描述: 1,600位(200萬x8/1M x16)的雙銀行NOR閃存
文件頁數(shù): 33/41頁
文件大?。?/td> 684K
代理商: K8D1716UTC-PC07
FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
33
SWITCHING WAVEFORMS
Parameter
Symbol
-7
-8
-9
Unit
Min
Max
Min
Max
Min
Max
Chip Enable Access Time
t
CE
-
70
-
80
-
90
ns
CE to BYTE Switching Low or High
t
ELFL
/t
ELFH
-
5
-
5
-
5
ns
BYTE Switching Low to Output HIGH-Z
t
FLQZ
-
25
-
25
-
30
ns
BYTE Switching High to Output Active
t
FHQV
-
25
-
25
-
35
ns
OE
t
FLQZ
CE
DQ0-DQ7
BYTE
WE
BYTE Timing Diagram for Write Operation
The falling edge of the last WE signal
CE
BYTE
t
HOLD
(t
AH
)
DQ15/A-1
t
ELFL
Address Input (A-1)
t
SET
(t
AS
)
Word to Byte Timing Diagram for Read Operation
Byte to Word Timing Diagram for Read Operation
Data Output
(DQ0-DQ7)
DQ8-DQ14
Data Output
(DQ8-DQ14)
Data Output
(DQ15)
OE
t
FHQV
CE
DQ0-DQ7
BYTE
DQ15/A-1
t
ELFH
Data Output
(DQ15)
DQ8-DQ14
Address Input
(A-1)
Data Output
(DQ8-DQ14)
t
CE
t
CE
Data Output
(DQ0-DQ7)
相關PDF資料
PDF描述
K8D1716UTC-PC08 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-PC09 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-PI07 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-PI08 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-PI09 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
K8D1716UTC-PC08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-PC09 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-PI07 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-PI08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-PI09 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory