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參數(shù)資料
| 型號： | K8D1716UTC-PC07 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 1,600位（200萬x8/1M x16）的雙銀行NOR閃存 |
| 文件頁數(shù)： | 8/41頁 |
| 文件大?。?/td> | 684K |
| 代理商： | K8D1716UTC-PC07 |
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FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
8
COMMAND DEFINITIONS
The K8D1716U operates by selecting and executing its operational modes. Each operational mode has its own command set. In
order to select a certain mode, a proper command with specific address and data sequences must be written into the command reg-
ister. Writing incorrect information which include address and data or writing an improper command will reset the device to the read
mode. The defined valid register command sequences are stated in Table 8. Note that Erase Suspend (B0H) and Erase Resume
(30H) commands are valid only while the Block Erase Operation is in progress.
Table 8. Command Sequences
Command Sequence
Cycle
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
6th Cycle
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Read
Addr
1
RA
Data
RD
Reset
Addr
1
XXXH
Data
F0H
Autoselect
Manufacturer
ID (2,3)
Addr
4
555H
AAAH
2AAH
555H
DA/
555H
DA/
AAAH
DA/
X00H
DA/
X00H
Data
AAH
55H
90H
ECH
Autoselect
Device Code
(2,3)
Addr
4
555H
AAAH
2AAH
555H
DA/
555H
DA/
AAAH
DA/
X01H
DA/
X02H
Data
AAH
55H
90H
(See Table 9)
Autoselect
Block Group
Protect Verify
(2,3)
Auto Select
Secode Block
Factory Protect
Verify (2,3)
Addr
4
555H
AAAH
2AAH
555H
DA/
555H
DA/
AAAH
BA /
X02H
BA/
X04H
Data
AAH
55H
90H
(See Table 9)
Addr
4
555H
AAAH
2AAH
555H
DA/
555H
DA/
AAAH
DA /
X03H
DA/
X06H
Data
AAH
55H
90H
(See Table 9)
Enter Secode
Block Region
Addr
3
555H
AAAH
2AAH
555H
555H
AAAH
Data
AAH
55H
88H
Exit Secode
Block Region
Addr
4
555H
AAAH
2AAH
555H
555H
AAAH
XXXH
Data
AAH
55H
90H
00H
Program
Addr
4
555H
AAAH
2AAH
555H
555H
AAAH
PA
Data
AAH
55H
A0H
PD
Unlock Bypass
Addr
3
555H
AAAH
2AAH
555H
555H
AAAH
Data
AAH
55H
20H
Unlock Bypass
Program
Addr
2
XXXH
PA
Data
A0H
PD
Unlock Bypass
Reset
Addr
2
XXXH
XXXH
Data
90H
00H
Chip Erase
Addr
6
555H
AAAH
2AAH
555H
555H
AAAH
555H
AAAH
2AAH
555H
555H
AAAH
Data
AAH
55H
80H
AAH
55H
10H
Block Erase
Addr
6
555H
AAAH
2AAH
555H
555H
AAAH
555H
AAAH
2AAH
555H
BA
Data
AAH
55H
80H
AAH
55H
30H
Block Erase
Suspend (4, 5)
Addr
1
XXXH
Data
B0H
Block Erase
Resume
Addr
1
XXXH
Data
30H
CFI Query (6)
Addr
1
55H
AAH
Data
98H
相關(guān)PDF資料 |
PDF描述 |
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| K8D1716UTC-PC08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC09 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PI07 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PI08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K8D1716UTC-PC08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PI07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
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